Instructions for Use:

1. Power Supply Considerations:

   • Ensure that the supply voltage does not exceed the maximum V_DS rating of 90V.
   • The gate-source voltage should be kept within the range of -18V to +18V.

2. Current Handling:

   • The continuous drain current should not exceed 15A at a case temperature of 25°C.
   • For pulsed applications, the peak drain current can be up to 45A with a pulse width of 10ms and a duty cycle of 1%.

3. On-State Resistance:

   • The on-state resistance is specified at two different gate-source voltages: 1.5Ω at V_GS = 10V and 2.5Ω at V_GS = 4.5V. Ensure that the gate drive voltage is sufficient to minimize power dissipation.

4. Thermal Management:

   • The junction temperature should be kept below 150°C to avoid thermal damage.
   • The device can be stored within a temperature range of -55°C to 150°C.

5. Avalanche Protection:

   • The device has an avalanche energy rating of 0.35J. Ensure that any potential overvoltage conditions do not exceed this energy limit.

6. Handling Precautions:

   • Handle the device with care to avoid static discharge, which can damage the sensitive MOSFET structure.
   • Follow proper soldering techniques to ensure reliable connections without overheating the device.

7. Mounting:

   • Use appropriate heat sinks or cooling methods to manage the thermal load, especially in high-power applications.
   • Ensure that the mounting surfaces are clean and free from contaminants to maximize thermal conductivity.

By following these guidelines, you can ensure optimal performance and reliability of the W15NK90Z MOSFET in your application.