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Specifications
SKU: 11565441
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 90 | V | Maximum |
| Gate-Source Voltage | VGS | ±20 | V | Maximum |
| Continuous Drain Current (TC = 25°C) | ID | 11 | A | Maximum |
| Continuous Drain Current (TC = 75°C) | ID | 7.7 | A | Maximum |
| Pulse Drain Current (TC = 25°C, tp = 10 ms, Duty Cycle = 1%) | ID(p) | 22 | A | Maximum |
| Power Dissipation (TC = 25°C) | PD | 130 | W | Maximum |
| Junction Temperature | TJ | -55 to +175 | °C | Operating Range |
| Storage Temperature | TSTG | -65 to +150 | °C | Operating Range |
| Thermal Resistance (Junction to Case) | RθJC | 0.8 | °C/W | Typical |
| Total Gate Charge | QG | 45 | nC | Maximum at VGS = 15 V, ID = 11 A |
| Input Capacitance | Ciss | 1250 | pF | Maximum at VDS = 90 V, f = 1 MHz |
| Output Capacitance | Coss | 240 | pF | Maximum at VDS = 90 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | 120 | pF | Maximum at VDS = 90 V, f = 1 MHz |
| On-State Resistance (VGS = 10 V) | RDS(on) | 0.12 | Ω | Maximum at ID = 11 A, TJ = 25°C |
| On-State Resistance (VGS = 4.5 V) | RDS(on) | 0.20 | Ω | Maximum at ID = 11 A, TJ = 25°C |
| Threshold Voltage | VGS(th) | 2.0 to 4.0 | V | Typical at ID = 250 μA, TJ = 25°C |
| Gate-Source Leakage Current | IGS | ±100 | nA | Maximum at VGS = ±20 V, TJ = 25°C |
| Drain-Source Leakage Current (VGS = 0 V) | IDSS | 10 | μA | Maximum at VDS = 90 V, TJ = 25°C |
Instructions:
Handling Precautions:
- Handle the device with care to avoid damage to the pins and the silicon die.
- Use proper ESD (Electrostatic Discharge) protection when handling the device.
Mounting:
- Ensure proper heat sinking to manage thermal dissipation, especially during high current operation.
- Use recommended PCB layout guidelines to minimize parasitic inductances and capacitances.
Biasing:
- Apply the gate voltage carefully to avoid exceeding the maximum ratings.
- Use appropriate gate drive circuits to ensure reliable switching.
Operation:
- Operate within the specified temperature range to ensure reliable performance.
- Monitor the junction temperature to prevent thermal runaway.
Testing:
- Use the specified test conditions for accurate parameter measurements.
- Refer to the datasheet for detailed test conditions and methods.
Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Follow recommended storage practices to maintain device integrity.
Inquiry - FMV11N90E,11N90E
