Specifications
SKU: 11590467
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 100 | - | V |
Gate-Source Voltage | VGS | -10 | - | 10 | V |
Continuous Drain Current | ID | - | 40 | - | A |
Power Dissipation | PTOT | - | - | 150 | W |
Junction Temperature | TJ | -55 | - | 175 | °C |
Storage Temperature | TSTG | -55 | - | 150 | °C |
Thermal Resistance, Junction to Case | RθJC | - | 0.6 | - | °C/W |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use thermal paste or thermal interface material between the device and the heatsink for better thermal conductivity.
Electrical Connections:
- Connect the drain (D), gate (G), and source (S) terminals correctly.
- Use short and thick wires to minimize inductance and resistance.
Gate Drive:
- Apply a gate voltage (VGS) within the specified range to turn the MOSFET on and off.
- Ensure the gate driver can provide sufficient current to charge and discharge the gate capacitance quickly.
Overvoltage Protection:
- Use appropriate overvoltage protection circuits to prevent damage from voltage spikes.
Operating Conditions:
- Do not exceed the maximum ratings for drain-source voltage, continuous drain current, and power dissipation.
- Monitor the junction temperature to avoid overheating.
Storage:
- Store the device in a dry and cool environment to prevent moisture damage.
- Handle with care to avoid mechanical stress and static discharge.
Testing:
- Perform initial testing at low power levels to ensure correct operation before full load testing.
- Use a suitable oscilloscope to monitor waveforms and ensure proper switching behavior.
Inquiry - CMP100N04 40A 100V TO-220