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CMP100N04 40A 100V TO-220

Specifications

SKU: 11590467

BUY CMP100N04 40A 100V TO-220 https://www.utsource.net/itm/p/11590467.html

Parameter Symbol Min Typical Max Unit
Drain-Source Voltage VDS - 100 - V
Gate-Source Voltage VGS -10 - 10 V
Continuous Drain Current ID - 40 - A
Power Dissipation PTOT - - 150 W
Junction Temperature TJ -55 - 175 °C
Storage Temperature TSTG -55 - 150 °C
Thermal Resistance, Junction to Case RθJC - 0.6 - °C/W

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Use thermal paste or thermal interface material between the device and the heatsink for better thermal conductivity.
  2. Electrical Connections:

    • Connect the drain (D), gate (G), and source (S) terminals correctly.
    • Use short and thick wires to minimize inductance and resistance.
  3. Gate Drive:

    • Apply a gate voltage (VGS) within the specified range to turn the MOSFET on and off.
    • Ensure the gate driver can provide sufficient current to charge and discharge the gate capacitance quickly.
  4. Overvoltage Protection:

    • Use appropriate overvoltage protection circuits to prevent damage from voltage spikes.
  5. Operating Conditions:

    • Do not exceed the maximum ratings for drain-source voltage, continuous drain current, and power dissipation.
    • Monitor the junction temperature to avoid overheating.
  6. Storage:

    • Store the device in a dry and cool environment to prevent moisture damage.
    • Handle with care to avoid mechanical stress and static discharge.
  7. Testing:

    • Perform initial testing at low power levels to ensure correct operation before full load testing.
    • Use a suitable oscilloscope to monitor waveforms and ensure proper switching behavior.
(For reference only)

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