Share:
Specifications
SKU: 11614645
Below is the parameter table and instructions for the 2SK2057 MOSFET.
Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | ( V_ ) | - | 300 | - | V | |
| Gate-Source Voltage | ( V_ ) | -10 | - | 10 | V | |
| Continuous Drain Current | ( I_ ) | - | 6.0 | - | A | ( T_C = 25^circ C ) |
| Continuous Drain Current (Pulsed) | ( I_{D(pulse)} ) | - | 8.0 | - | A | ( t_p = 10 mu s, f = 100 Hz ) |
| Power Dissipation | ( P_D ) | - | 60 | - | W | ( T_C = 25^circ C ) |
| Junction Temperature | ( T_J ) | - | - | 150 | °C | |
| Storage Temperature Range | ( T_ ) | -55 | - | 150 | °C | |
| Input Capacitance | ( C_ ) | - | 280 | - | pF | ( V_ = 0V, f = 1 MHz ) |
| Output Capacitance | ( C_ ) | - | 110 | - | pF | ( V_ = 300V, f = 1 MHz ) |
| Reverse Transfer Capacitance | ( C_ ) | - | 45 | - | pF | ( V_ = 300V, f = 1 MHz ) |
| Threshold Voltage | ( V_{GS(th)} ) | 2.0 | 3.0 | 4.0 | V | ( I_D = 1 mA ) |
| On-State Resistance | ( R_{DS(on)} ) | - | 0.18 | - | Ω | ( V_ = 10V, I_D = 6A ) |
| Gate Charge | ( Q_g ) | - | 120 | - | nC | ( V_ = 10V, I_D = 6A ) |
| Switching Time | ( t_{d(on)} ) | - | 25 | - | ns | ( V_ = 10V, I_D = 6A ) |
| Switching Time | ( t_ ) | - | 35 | - | ns | ( V_ = 10V, I_D = 6A ) |
| Switching Time | ( t_{d(off)} ) | - | 15 | - | ns | ( V_ = 10V, I_D = 6A ) |
| Switching Time | ( t_ ) | - | 20 | - | ns | ( V_ = 10V, I_D = 6A ) |
Instructions
Handling and Storage:
- Handle the 2SK2057 with care to avoid damage to the leads and body.
- Store the device in a dry, cool place within the specified storage temperature range (-55°C to 150°C).
Mounting:
- Ensure proper heat sinking to maintain the junction temperature below 150°C.
- Use appropriate mounting hardware and thermal compound to ensure good thermal contact.
Biasing:
- Apply the gate-source voltage (( V_ )) within the specified range (-10V to +10V).
- Ensure that the drain-source voltage (( V_ )) does not exceed 300V.
Current Handling:
- Do not exceed the continuous drain current (( I_D )) of 6A at 25°C case temperature.
- For pulsed applications, do not exceed 8A with a pulse width of 10 μs and a frequency of 100 Hz.
Power Dissipation:
- Ensure that the power dissipation (( P_D )) does not exceed 60W at 25°C case temperature.
Capacitance Considerations:
- Account for the input capacitance (( C_ )), output capacitance (( C_ )), and reverse transfer capacitance (( C_ )) in your circuit design to optimize performance.
Switching Characteristics:
- Use the switching times (( t_{d(on)}, t_r, t_{d(off)}, t_f )) to design the gate drive circuit and minimize switching losses.
Testing:
- Test the device under controlled conditions to ensure it meets the specified parameters.
- Use appropriate test equipment and methods to avoid damage to the device.
By following these instructions, you can ensure reliable operation and optimal performance of the 2SK2057 MOSFET in your application.
(For reference only)Inquiry - 2SK2057
