Specifications
SKU: 11614673
Parameter | Description | Value | Unit |
---|---|---|---|
Part Number | Component Identifier | TK19A50W | - |
Type | Device Type | Power MOSFET | - |
VDS | Drain-Source Voltage | 500 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID | Continuous Drain Current | 50 | A |
PD | Total Power Dissipation | 250 | W |
RDS(on) | On-State Resistance | 4.5 | mΩ |
fT | Transition Frequency | 2.5 | MHz |
Qg | Total Gate Charge | 180 | nC |
Vth | Threshold Voltage | 4.0 to 5.0 | V |
SOA | Safe Operating Area | Refer to Datasheet | - |
Package | Encapsulation | TO-247 | - |
Operating Temperature | Junction Temperature | -55 to 175 | °C |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within the operating range.
- Use a thermal compound between the device and the heatsink to improve thermal conductivity.
Biasing:
- Apply the gate voltage (VGS) carefully to avoid exceeding the maximum ratings.
- Use appropriate gate drive circuits to ensure fast switching and minimize switching losses.
Handling:
- Handle the device with care to avoid mechanical damage.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage to the device.
Storage:
- Store in a dry, cool place to prevent moisture damage.
- Keep the device in its original packaging until ready for use.
Testing:
- Use a suitable test setup to verify the device parameters before integrating it into the final application.
- Refer to the datasheet for detailed testing procedures and recommended test conditions.
Applications:
- Suitable for high-power switching applications such as motor control, power supplies, and inverters.
- Ensure the device is used within its safe operating area (SOA) to prevent thermal runaway and device failure.
Inquiry - TK19A50W