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TK19A50W

Specifications

SKU: 11614673

BUY TK19A50W https://www.utsource.net/itm/p/11614673.html

Parameter Description Value Unit
Part Number Component Identifier TK19A50W -
Type Device Type Power MOSFET -
VDS Drain-Source Voltage 500 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current 50 A
PD Total Power Dissipation 250 W
RDS(on) On-State Resistance 4.5
fT Transition Frequency 2.5 MHz
Qg Total Gate Charge 180 nC
Vth Threshold Voltage 4.0 to 5.0 V
SOA Safe Operating Area Refer to Datasheet -
Package Encapsulation TO-247 -
Operating Temperature Junction Temperature -55 to 175 °C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to maintain junction temperature within the operating range.
    • Use a thermal compound between the device and the heatsink to improve thermal conductivity.
  2. Biasing:

    • Apply the gate voltage (VGS) carefully to avoid exceeding the maximum ratings.
    • Use appropriate gate drive circuits to ensure fast switching and minimize switching losses.
  3. Handling:

    • Handle the device with care to avoid mechanical damage.
    • Follow ESD (Electrostatic Discharge) precautions to prevent damage to the device.
  4. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Keep the device in its original packaging until ready for use.
  5. Testing:

    • Use a suitable test setup to verify the device parameters before integrating it into the final application.
    • Refer to the datasheet for detailed testing procedures and recommended test conditions.
  6. Applications:

    • Suitable for high-power switching applications such as motor control, power supplies, and inverters.
    • Ensure the device is used within its safe operating area (SOA) to prevent thermal runaway and device failure.
(For reference only)

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