Specifications
SKU: 11616760
Parameter | Value |
---|---|
Part Number | RFP50N06 |
Type | MOSFET |
Package | TO-220 |
VDSS | 60V |
ID | 50A (at 25°C) |
RDS(on) | 0.018Ω (max at 25°C, VGS=10V) |
Power Dissipation | 115W (at 25°C, derated above 25°C) |
Operating Temperature | -55°C to +150°C |
Storage Temperature | -65°C to +175°C |
Gate Charge | 43nC (typical) |
Input Capacitance | 1240pF (typical) |
Output Capacitance | 590pF (typical) |
Reverse Transfer Capacitance | 300pF (typical) |
VGS(th) | 2V to 4V (gate threshold voltage) |
Continuous Drain Current | 50A (at 25°C, derated above 25°C) |
Pulse Drain Current | 150A (tp=10ms, IDM) |
Lead Finish | Tin |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to manage power dissipation.
- Handle with care to avoid damage to the leads and package.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use appropriate wire gauges to handle the current ratings.
Thermal Management:
- The device can dissipate up to 115W at 25°C ambient temperature. Use a heatsink to maintain the junction temperature within safe limits.
- Derate the power dissipation linearly above 25°C.
Gate Drive:
- Apply a gate-source voltage (VGS) of at least 10V to fully turn on the MOSFET.
- Ensure the gate drive circuit has low impedance to minimize switching losses.
Storage and Handling:
- Store in a dry, cool place to prevent moisture damage.
- Follow ESD (Electrostatic Discharge) precautions to avoid damaging the MOSFET.
Testing:
- Use a multimeter or an oscilloscope to verify the correct operation of the MOSFET.
- Test the device under controlled conditions to ensure it meets the specified parameters.
Safety:
- Always follow safety guidelines when working with high currents and voltages.
- Use protective equipment such as gloves and safety glasses.
By following these instructions, you can ensure optimal performance and longevity of the RFP50N06 MOSFET.
(For reference only)Inquiry - RFP50N06 ORIGINAL GOODS IN STOCK