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Specifications
SKU: 11617203
| Parameter | Description | Value |
|---|---|---|
| Part Number | FGH40N60UFD | |
| Manufacturer | Fairchild Semiconductor | |
| Type | N-Channel MOSFET | |
| Package | TO-220 | |
| VDS (Max) | Drain-to-Source Voltage | 600 V |
| VGS (Max) | Gate-to-Source Voltage | ±20 V |
| ID (Max) | Continuous Drain Current | 40 A |
| RDS(on) (Max) | On-State Resistance | 0.18 Ω at VGS = 10 V |
| Power Dissipation | Maximum Power Dissipation | 150 W |
| Operating Temperature | Junction Temperature Range | -55°C to +150°C |
| Storage Temperature | Storage Temperature Range | -65°C to +175°C |
| Total Gate Charge | Total Gate Charge | 120 nC |
| Input Capacitance | Input Capacitance | 1950 pF |
| Output Capacitance | Output Capacitance | 500 pF |
| Reverse Transfer Capacitance | Reverse Transfer Capacitance | 330 pF |
| Thermal Resistance | Junction to Case | 1.5°C/W |
| Thermal Resistance | Junction to Ambient | 62.5°C/W |
Instructions for Use:
Handling Precautions:
- ESD Protection: The FGH40N60UFD is sensitive to electrostatic discharge (ESD). Always use proper ESD protection equipment when handling the device.
- Polarity: Ensure correct polarity when connecting the device. Connecting the device in reverse can cause immediate damage.
Mounting:
- Heat Sinking: For high power applications, ensure adequate heat sinking to maintain the junction temperature within the specified range.
- Torque Specifications: Follow the recommended torque specifications for screw terminals to avoid mechanical stress on the device.
Operation:
- Gate Drive: Apply a gate voltage (VGS) between 10 V and 15 V for optimal performance. Avoid exceeding the maximum VGS rating.
- Overcurrent Protection: Implement overcurrent protection to prevent damage from excessive drain current.
- Thermal Management: Monitor the device temperature and ensure it does not exceed the maximum operating temperature.
Storage:
- Humidity Control: Store the device in a dry environment to prevent moisture-related issues.
- Temperature Range: Store the device within the specified storage temperature range to avoid thermal stress.
Testing:
- Initial Testing: Perform initial testing under controlled conditions to verify the device parameters.
- Periodic Testing: Conduct periodic testing to ensure the device remains within its operational parameters.
For more detailed information, refer to the datasheet provided by Fairchild Semiconductor.
(For reference only)Inquiry - FGH40N60UFD ORIGINAL GOODS IN STOCK
