Instructions for Use:

1. Power Supply:

   • Ensure that both VCC and VCCQ are supplied with 1.8 V ± 0.1 V.
   • Connect VCC to the power supply and VCCQ to the I/O buffer power supply.

2. Addressing:

   • The device has 13 row address bits and 9 column address bits.
   • Address lines should be stable before the falling edge of the row address strobe (RAS#) and column address strobe (CAS#).

3. Control Signals:

   • Chip Select (CS#): Active low. When CS# is high, all commands are ignored.
   • Row Address Strobe (RAS#): Active low. Used to latch the row address.
   • Column Address Strobe (CAS#): Active low. Used to latch the column address.
   • Write Enable (WE#): Active low. Determines whether the operation is a read or write.
   • Output Enable (OE#): Active low. Enables the output buffers during a read operation.

4. Timing:

   • Access Time (tAA): The time from the falling edge of RAS# and CAS# to valid data on the I/O pins is 45 ns.
   • Cycle Time (tRC): The minimum time between two consecutive RAS# low pulses is 66 ns.
   • CAS Latency (CL): The number of clock cycles between the falling edge of CAS# and the availability of valid data. CL can be set to 3 or 2.

5. Refresh:

   • The device requires 8192 refresh cycles every 64 ms to maintain data integrity.
   • Refresh operations can be performed by asserting RAS# low while keeping CAS# and WE# high.

6. Burst Mode:

   • The device supports burst lengths of 8, 4, sequential, and full page.
   • The burst length is determined by the mode register settings.

7. Package Handling:

   • Handle the BGA package with care to avoid damage to the balls.
   • Ensure proper alignment and placement during soldering to avoid short circuits.

8. Storage and Operating Conditions:

   • Store the device in a dry environment within the temperature range of -40 to +85°C.
   • Operate the device within the specified operating temperature range of -40 to +85°C to ensure reliable performance.