Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Use thermal compound between the transistor and the heat sink for optimal thermal performance.

2. Biasing:

   • Apply base current (I_B) sufficient to ensure the transistor is fully saturated when in active use.
   • Avoid exceeding the maximum base current (I_B) to prevent damage.

3. Voltage Ratings:

   • Do not exceed the maximum collector-emitter voltage (V_CEO) or collector-base voltage (V_CBO).
   • Ensure the emitter-base voltage (V_EBO) is within the specified range to avoid breakdown.

4. Current Handling:

   • The continuous collector current (I_C) should not exceed 7A to prevent overheating and potential failure.
   • If operating near the maximum current, ensure adequate cooling.

5. Power Dissipation:

   • The total power dissipation (P_TOT) should not exceed 125W to avoid exceeding the maximum junction temperature (T_J).

6. Temperature Range:

   • Operate the device within the specified junction, storage, and case temperature ranges to ensure reliability and longevity.
   • Avoid exposing the device to temperatures outside the -55°C to 150°C range.

7. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid mechanical stress on the leads and body.

8. Electrostatic Discharge (ESD) Protection:

   • Use proper ESD protection measures during handling and assembly to prevent damage from static electricity.

9. Soldering:

   • Solder the device at a temperature not exceeding 260°C for no more than 10 seconds per connection.
   • Allow the device to cool naturally after soldering to prevent thermal shock.