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IRGB20B60PD1PBF

Specifications

SKU: 11648701

BUY IRGB20B60PD1PBF https://www.utsource.net/itm/p/11648701.html

Parameter Symbol Min Typical Max Unit
Continuous Collector Current IC - 60 - A
Collector-Emitter Breakdown Voltage V(BR)CEO 550 - 650 V
Emitter-Base Breakdown Voltage V(BR)EBO 7 - 9 V
Collector-Emitter Saturation Voltage VCE(sat) - 1.8 - V
Base-Emitter Saturation Voltage VBE(sat) - 1.2 - V
Storage Temperature Range Tstg -55 - 150 °C
Junction Temperature TJ -55 - 150 °C
Total Device Dissipation PD - 180 - W

Instructions for IRGB20B60PD1PBF

  1. Handling and Storage:

    • Store the device in a dry, cool place to avoid moisture damage.
    • Handle with care to prevent mechanical damage to the leads and body.
  2. Mounting:

    • Ensure proper heat sinking to manage the junction temperature (TJ).
    • Use appropriate mounting hardware and thermal compound to enhance heat dissipation.
  3. Electrical Connections:

    • Connect the collector, emitter, and base terminals correctly to avoid damage.
    • Use short leads to minimize inductive effects and improve performance.
  4. Operating Conditions:

    • Do not exceed the maximum ratings specified in the table.
    • Ensure the device operates within the recommended operating conditions to avoid thermal runaway.
  5. Testing:

    • Use a suitable test setup to verify the device parameters before integrating it into the final application.
    • Test the device under controlled conditions to ensure reliability and performance.
  6. Safety:

    • Always use appropriate safety measures when handling high-voltage and high-current circuits.
    • Follow all relevant safety standards and guidelines.
  7. Soldering:

    • Use a soldering iron or machine with a temperature-controlled tip.
    • Avoid excessive heat and prolonged soldering times to prevent damage to the device.
  8. Troubleshooting:

    • If the device fails, check for overvoltage, overcurrent, or overheating conditions.
    • Verify the connections and ensure that the device is properly heat-sinked.

For detailed application notes and further information, refer to the datasheet provided by Infineon Technologies.

(For reference only)

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