Specifications
SKU: 11649553
Parameter | Symbol | Min | Typ | Max | Unit | Notes |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 40 | V | |
Emitter-Collector Voltage | VEBO | - | - | 6 | V | |
Collector-Base Voltage | VCBO | - | - | 60 | V | |
Continuous Collector Current | IC | - | - | 200 | mA | |
Collector Power Dissipation | PT | - | - | 625 | mW | At TA = 25°C |
DC Current Gain | hFE | 100 | 300 | 800 | - | At IC = 10 mA, VCE = 1 V |
Transition Frequency | fT | - | 300 | - | MHz | |
Storage Temperature Range | TSTG | -65 | - | 150 | °C | |
Operating Temperature Range | TA | -65 | - | 150 | °C |
Instructions for Using MMBT3906TT1G:
Handling Precautions:
- ESD Sensitivity: The MMBT3906TT1G is sensitive to electrostatic discharge (ESD). Use proper grounding and ESD protection when handling the device.
- Temperature: Avoid exposing the device to temperatures outside its operating range to prevent damage.
Mounting:
- Soldering: Use a soldering iron with a temperature not exceeding 300°C for no more than 5 seconds per joint. Ensure that the soldering iron is grounded to prevent ESD damage.
- Mechanical Stress: Avoid applying excessive mechanical stress to the leads during soldering or mounting. Ensure that the leads are not bent too close to the body of the transistor.
Circuit Design:
- Biasing: Proper biasing is crucial for the stable operation of the transistor. Ensure that the base-emitter voltage (VBE) is within the specified limits.
- Heat Dissipation: If the transistor will be operating near its maximum power dissipation, consider using a heatsink to improve heat dissipation and maintain the junction temperature within safe limits.
Testing:
- Initial Testing: Before integrating the transistor into a circuit, test it individually to ensure it meets the specified parameters.
- Operational Testing: Monitor the temperature and current levels during operation to ensure they remain within safe limits.
Storage:
- Environment: Store the device in a dry, cool environment to prevent moisture damage.
- Packaging: Keep the device in its original packaging until ready for use to protect it from ESD and physical damage.
By following these guidelines, you can ensure the reliable and efficient operation of the MMBT3906TT1G transistor in your circuits.
(For reference only)Inquiry - MMBT3906TT1G