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Specifications
SKU: 11661404
| Parameter | Symbol | Min | Typical | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Continuous Drain Current | ID | - | 80 | - | A | @ TC = 25°C, VGS = 10V |
| Pulse Drain Current | IDpeak | - | 360 | - | A | @ TC = 25°C, t = 10μs, Duty Cycle = 1% |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | - |
| Drain-Source Breakdown Voltage | BVdss | 55 | - | 60 | V | - |
| RDS(on) | RDS(on) | 1.4 | - | 2.0 | mΩ | @ VGS = 10V, ID = 80A, TC = 25°C |
| Gate Charge | Qg | - | 125 | - | nC | - |
| Input Capacitance | Ciss | - | 1590 | - | pF | @ VDS = 15V, VGS = 0V to 10V, f = 1MHz |
| Output Capacitance | Coss | - | 230 | - | pF | @ VDS = 15V, VGS = 0V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | - | 380 | - | pF | @ VDS = 15V, VGS = 0V to 10V, f = 1MHz |
| Total Power Dissipation | Ptot | - | 360 | - | W | @ TC = 25°C |
| Junction Temperature | TJ | -55 | - | 175 | °C | - |
| Storage Temperature | Tstg | -55 | - | 150 | °C | - |
Instructions for Use:
Handling and Storage:
- Store the IRFB4127 in a dry, cool place.
- Handle with care to avoid damage to the leads and the die.
Mounting:
- Ensure proper heat sinking to manage thermal resistance.
- Use a suitable heatsink to keep the junction temperature within the specified limits.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Ensure that the gate-source voltage (VGS) does not exceed the maximum rating of ±20V.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed 175°C.
- Use thermal paste or thermal interface materials between the device and the heatsink for better thermal conductivity.
Pulse Operation:
- For pulse operation, ensure that the pulse width and duty cycle do not exceed the specified limits to avoid overheating.
Gate Drive:
- Provide sufficient gate drive to ensure the MOSFET is fully turned on, reducing RDS(on) and power dissipation.
- Use a low impedance gate driver to minimize switching losses.
Protective Circuits:
- Consider adding overvoltage and overcurrent protection circuits to safeguard the MOSFET from transient conditions.
Testing:
- Test the device under controlled conditions to verify its performance and reliability.
- Follow the datasheet recommendations for testing procedures.
By adhering to these guidelines, you can ensure optimal performance and longevity of the IRFB4127 MOSFET.
(For reference only)Inquiry - IRFB4127
