BUY RA30H4047M1,RA30H4047M1-101 https://www.utsource.net/itm/p/11661487.html
Silicon RF Devices RF High Power MOS FET Modules RA30H4047M1 Remarks RoHS : Restriction of the use of certain Hazardous Substances in Electrical and Electronic Equipment
RA30H4047M1 is a RF power transistor module manufactured by Mitsubishi. It is designed for use in applications such as cellular base stations, repeaters, and other RF power amplifiers. The RA30H4047M1 is a high-power RF transistor module that offers a maximum output power of 30W and a gain of 18.5dB. It has a frequency range of 890 to 960MHz and a supply voltage of 28V. The module also features a high-efficiency design and is capable of operating at temperatures up to +85°C. The RA30H4047M1 is ideal for use in applications such as cellular base stations, repeaters, and other RF power amplifiers. It can also be used in other applications such as broadcast transmitters, satellite communications, and wireless local area networks. (For reference only)