Share:
Specifications
SKU: 11665084
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | 600 | - | V | |
| Gate-Source Voltage | VGSS | -20 | - | 15 | V | |
| Continuous Drain Current (TC = 25°C) | ID | - | 28 | - | A | |
| Continuous Drain Current (TC = 100°C) | ID | - | 17.5 | - | A | |
| Pulse Drain Current (TC = 25°C, tp = 10 ms, Duty Cycle = 1%) | ID(p) | - | 130 | - | A | |
| Gate Charge | QG | - | 95 | - | nC | |
| Input Capacitance | Ciss | - | 4400 | - | pF | VGS = 15V, f = 1 MHz |
| Output Capacitance | Coss | - | 1250 | - | pF | VDS = 400V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 650 | - | pF | VDS = 400V, f = 1 MHz |
| Total Gate Charge | QG | - | 95 | - | nC | VGS = 15V, VDS = 400V, ID = 28A |
| Turn-On Delay Time | tdon | - | 30 | - | ns | VGS = 15V, ID = 28A, Rg = 3.3Ω |
| Rise Time | tr | - | 35 | - | ns | VGS = 15V, ID = 28A, Rg = 3.3Ω |
| Turn-Off Delay Time | tdo | - | 40 | - | ns | VGS = 15V, ID = 28A, Rg = 3.3Ω |
| Fall Time | tf | - | 50 | - | ns | VGS = 15V, ID = 28A, Rg = 3.3Ω |
| Power Dissipation (TC = 25°C) | PD | - | 250 | - | W | |
| Junction to Case Thermal Resistance | RθJC | - | 0.6 | - | °C/W | |
| Junction to Ambient Thermal Resistance | RθJA | - | 40 | - | °C/W | |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C | |
| Operating Junction Temperature | TJ | -55 | - | 150 | °C |
Instructions for Use:
Power Supply and Heat Sinking:
- Ensure that the power supply voltage does not exceed the maximum drain-source voltage (VDSS).
- Use appropriate heat sinking to keep the junction temperature within the operating range (TJ).
Gate Drive:
- Apply the gate-source voltage (VGSS) within the specified limits to avoid damage.
- Use a gate resistor (Rg) to control the switching speed and reduce EMI.
Current Handling:
- Do not exceed the continuous drain current (ID) ratings at the specified case temperatures.
- For pulse applications, ensure that the pulse duration and duty cycle do not exceed the specified limits.
Capacitance and Charge:
- Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) when designing the circuit.
- The total gate charge (QG) affects the switching losses; ensure that the gate drive circuit can handle this charge efficiently.
Thermal Management:
- Monitor the thermal resistance (RθJC and RθJA) to ensure proper heat dissipation.
- Use thermal vias and heatsinks to maintain the device within its safe operating area.
Storage and Handling:
- Store the device in a dry environment and handle with care to prevent electrostatic discharge (ESD) damage.
- Follow the recommended storage temperature range (Tstg) to avoid degradation.
Testing and Validation:
- Perform thorough testing under all expected operating conditions to validate the performance and reliability of the device in your application.
Inquiry - P28N60M2 STP28N60M2
