Specifications
SKU: 11667721
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | Vceo | 800 | V |
Emitter-Base Voltage | Vebo | 7 | V |
Collector Current | Ic | 15 | A |
Power Dissipation | Ptot | 200 | W |
Junction Temperature | Tj | -55 to 150 | °C |
Storage Temperature | Tstg | -65 to 150 | °C |
Base-Emitter Saturation Voltage | Vbe(sat) | 2.3 (max) | V |
Collector-Emitter Saturation Voltage | Vce(sat) | 2.0 (max) | V |
Transition Frequency | F(t) | 3.5 | MHz |
Thermal Resistance (J-C) | Rth(j-c) | 1.2 | °C/W |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use thermal compound between the transistor and the heat sink for efficient heat transfer.
Biasing:
- Apply base current (Ib) carefully to avoid exceeding the maximum base-emitter voltage (Vebo).
- Use a base resistor to limit the base current and protect the transistor from overdrive.
Operation:
- Do not exceed the maximum collector current (Ic) or collector-emitter voltage (Vceo) ratings.
- Keep the power dissipation (Ptot) within the specified limit to prevent overheating.
Storage:
- Store the transistor in a dry, cool place away from direct sunlight and extreme temperatures.
- Handle with care to avoid mechanical damage.
Testing:
- Before installation, test the transistor using a multimeter or transistor tester to ensure it is functioning correctly.
- Check for continuity and resistance values to verify the integrity of the leads.
Safety:
- Always use appropriate safety equipment when handling high-voltage circuits.
- Follow all relevant electrical safety guidelines and regulations.
Inquiry - MJ15024G