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MJ15024G

Specifications

SKU: 11667721

BUY MJ15024G https://www.utsource.net/itm/p/11667721.html

Parameter Symbol Value Unit
Collector-Emitter Voltage Vceo 800 V
Emitter-Base Voltage Vebo 7 V
Collector Current Ic 15 A
Power Dissipation Ptot 200 W
Junction Temperature Tj -55 to 150 °C
Storage Temperature Tstg -65 to 150 °C
Base-Emitter Saturation Voltage Vbe(sat) 2.3 (max) V
Collector-Emitter Saturation Voltage Vce(sat) 2.0 (max) V
Transition Frequency F(t) 3.5 MHz
Thermal Resistance (J-C) Rth(j-c) 1.2 °C/W

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Use thermal compound between the transistor and the heat sink for efficient heat transfer.
  2. Biasing:

    • Apply base current (Ib) carefully to avoid exceeding the maximum base-emitter voltage (Vebo).
    • Use a base resistor to limit the base current and protect the transistor from overdrive.
  3. Operation:

    • Do not exceed the maximum collector current (Ic) or collector-emitter voltage (Vceo) ratings.
    • Keep the power dissipation (Ptot) within the specified limit to prevent overheating.
  4. Storage:

    • Store the transistor in a dry, cool place away from direct sunlight and extreme temperatures.
    • Handle with care to avoid mechanical damage.
  5. Testing:

    • Before installation, test the transistor using a multimeter or transistor tester to ensure it is functioning correctly.
    • Check for continuity and resistance values to verify the integrity of the leads.
  6. Safety:

    • Always use appropriate safety equipment when handling high-voltage circuits.
    • Follow all relevant electrical safety guidelines and regulations.
(For reference only)

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