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CSD18502KCS

Specifications

SKU: 11669929

BUY CSD18502KCS https://www.utsource.net/itm/p/11669929.html

Parameter Symbol Min Typical Max Unit
Continuous Drain Current ID - 39.6 49.5 A
Pulse Drain Current ID(PULSE) - 70 - A
Drain-Source Voltage VDS - - 30 V
Gate-Source Voltage VGS -10 - 10 V
RDS(on) @ VGS=4.5V RDS(on) - 4.5 -
RDS(on) @ VGS=10V RDS(on) - 2.5 -
Gate Charge QG - 40 - nC
Input Capacitance Ciss - 1500 - pF
Output Capacitance Coss - 450 - pF
Total Power Dissipation PD - - 170 W
Junction Temperature Tj -55 - 150 °C
Storage Temperature Tstg -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Handle the device with care to avoid mechanical stress.
    • Ensure proper heat sinking if operating at high power levels.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Use short leads to minimize parasitic inductance.
  3. Thermal Management:

    • Ensure adequate cooling to keep the junction temperature within the specified range.
    • Use thermal paste between the device and heat sink for better thermal conductivity.
  4. Gate Drive:

    • Apply a gate voltage (VGS) within the specified range to turn the MOSFET on and off.
    • Use a gate resistor to control the switching speed and reduce ringing.
  5. Overcurrent Protection:

    • Implement overcurrent protection to prevent damage from excessive current.
    • Monitor the drain current and use appropriate circuitry to limit it if necessary.
  6. Storage and Handling:

    • Store the device in a dry, cool place.
    • Follow ESD (Electrostatic Discharge) precautions to avoid damaging the device.
  7. Testing:

    • Perform initial testing at low power levels to ensure correct operation.
    • Gradually increase the power and monitor performance parameters.
  8. Compliance:

    • Ensure that the application complies with relevant safety and regulatory standards.
(For reference only)

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