Specifications
SKU: 11669929
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Continuous Drain Current | ID | - | 39.6 | 49.5 | A |
Pulse Drain Current | ID(PULSE) | - | 70 | - | A |
Drain-Source Voltage | VDS | - | - | 30 | V |
Gate-Source Voltage | VGS | -10 | - | 10 | V |
RDS(on) @ VGS=4.5V | RDS(on) | - | 4.5 | - | mΩ |
RDS(on) @ VGS=10V | RDS(on) | - | 2.5 | - | mΩ |
Gate Charge | QG | - | 40 | - | nC |
Input Capacitance | Ciss | - | 1500 | - | pF |
Output Capacitance | Coss | - | 450 | - | pF |
Total Power Dissipation | PD | - | - | 170 | W |
Junction Temperature | Tj | -55 | - | 150 | °C |
Storage Temperature | Tstg | -55 | - | 150 | °C |
Instructions for Use:
Mounting and Handling:
- Handle the device with care to avoid mechanical stress.
- Ensure proper heat sinking if operating at high power levels.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use short leads to minimize parasitic inductance.
Thermal Management:
- Ensure adequate cooling to keep the junction temperature within the specified range.
- Use thermal paste between the device and heat sink for better thermal conductivity.
Gate Drive:
- Apply a gate voltage (VGS) within the specified range to turn the MOSFET on and off.
- Use a gate resistor to control the switching speed and reduce ringing.
Overcurrent Protection:
- Implement overcurrent protection to prevent damage from excessive current.
- Monitor the drain current and use appropriate circuitry to limit it if necessary.
Storage and Handling:
- Store the device in a dry, cool place.
- Follow ESD (Electrostatic Discharge) precautions to avoid damaging the device.
Testing:
- Perform initial testing at low power levels to ensure correct operation.
- Gradually increase the power and monitor performance parameters.
Compliance:
- Ensure that the application complies with relevant safety and regulatory standards.
Inquiry - CSD18502KCS