Specifications
SKU: 11679176
Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 1200 | V | ||
Gate-Source Voltage | VGS | -20 | 20 | V | ||
Continuous Drain Current | ID | - | 6 | 8.5 | A | TC = 25°C |
Pulse Drain Current | IDpeak | - | 12 | 17 | A | tp = 10 μs, IG = 6 A |
Power Dissipation | PD | - | 140 | W | TC = 25°C | |
Junction Temperature | TJ | - | 175 | °C | ||
Storage Temperature | TSTG | -55 | 175 | °C | ||
Thermal Resistance | RθJC | - | 0.9 | 1.1 | K/W |
Instructions for Use:
Handling Precautions:
- Handle the device with care to avoid damage.
- Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
Mounting:
- Ensure that the device is mounted on a heatsink if operating at high power levels to maintain junction temperature within safe limits.
- Follow the recommended PCB layout guidelines to ensure optimal thermal performance.
Gate Drive:
- Apply a gate-source voltage (VGS) between 10V and 15V for reliable turn-on.
- Ensure that the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.
Operating Conditions:
- Do not exceed the maximum ratings listed in the parameter table.
- Monitor the junction temperature (TJ) to ensure it remains below 175°C.
- If operating at high temperatures, consider derating the continuous drain current (ID) to ensure reliability.
Testing:
- When testing the device, use appropriate test equipment and follow safety guidelines to avoid damage to the device or injury to personnel.
Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- Keep the device in its original packaging until ready for use to protect against physical damage.
For more detailed information, refer to the datasheet provided by STMicroelectronics.
(For reference only)Inquiry - STFW6N120K3