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STFW6N120K3

Specifications

SKU: 11679176

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Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage VDS - 1200 V
Gate-Source Voltage VGS -20 20 V
Continuous Drain Current ID - 6 8.5 A TC = 25°C
Pulse Drain Current IDpeak - 12 17 A tp = 10 μs, IG = 6 A
Power Dissipation PD - 140 W TC = 25°C
Junction Temperature TJ - 175 °C
Storage Temperature TSTG -55 175 °C
Thermal Resistance RθJC - 0.9 1.1 K/W

Instructions for Use:

  1. Handling Precautions:

    • Handle the device with care to avoid damage.
    • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
  2. Mounting:

    • Ensure that the device is mounted on a heatsink if operating at high power levels to maintain junction temperature within safe limits.
    • Follow the recommended PCB layout guidelines to ensure optimal thermal performance.
  3. Gate Drive:

    • Apply a gate-source voltage (VGS) between 10V and 15V for reliable turn-on.
    • Ensure that the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.
  4. Operating Conditions:

    • Do not exceed the maximum ratings listed in the parameter table.
    • Monitor the junction temperature (TJ) to ensure it remains below 175°C.
    • If operating at high temperatures, consider derating the continuous drain current (ID) to ensure reliability.
  5. Testing:

    • When testing the device, use appropriate test equipment and follow safety guidelines to avoid damage to the device or injury to personnel.
  6. Storage:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Keep the device in its original packaging until ready for use to protect against physical damage.

For more detailed information, refer to the datasheet provided by STMicroelectronics.

(For reference only)

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