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Specifications
SKU: 11682637
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -10 | 100 | V | Maximum drain-to-source voltage | |
| Gate-Source Voltage | VGS | -20 | 20 | V | Maximum gate-to-source voltage | |
| Continuous Drain Current | ID | 13 | A | Continuous drain current at 25°C | ||
| Pulse Drain Current | ID(pulse) | 60 | A | Pulse drain current (tp = 10 ms, θjc = 3°C/W) | ||
| Power Dissipation | PD | 140 | W | Maximum power dissipation | ||
| Junction Temperature | TJ | -55 | 150 | °C | Operating junction temperature range | |
| Storage Temperature | TSTG | -55 | 150 | °C | Storage temperature range | |
| Total Gate Charge | QG | 38 | nC | Total gate charge | ||
| Input Capacitance | Ciss | 970 | pF | Input capacitance at VGS = 0 V, f = 1 MHz | ||
| Output Capacitance | Coss | 300 | pF | Output capacitance at VDS = 100 V, f = 1 MHz | ||
| Reverse Transfer Capacitance | Crss | 170 | pF | Reverse transfer capacitance at VDS = 100 V, f = 1 MHz | ||
| On-State Resistance | RDS(on) | 0.085 | 0.12 | Ω | On-state resistance at VGS = 10 V, ID = 13 A | |
| Threshold Voltage | VGS(th) | 1.0 | 2.0 | 3.0 | V | Gate threshold voltage |
| Leakage Current | IDSS | 1 | μA | Drain-source leakage current at VDS = 100 V, TJ = 25°C |
Instructions for Use:
Voltage Handling:
- Ensure that the drain-source voltage (VDS) does not exceed 100 V.
- The gate-source voltage (VGS) should be kept within ±20 V to avoid damage.
Current Management:
- The continuous drain current (ID) should not exceed 13 A at 25°C ambient temperature.
- For pulse applications, the peak drain current (ID(pulse)) can reach up to 60 A, but ensure the pulse duration is limited to 10 ms and the thermal resistance (θjc) is 3°C/W.
Power Dissipation:
- The maximum power dissipation (PD) is 140 W. Proper heat sinking is essential to manage the temperature.
Temperature Considerations:
- The operating junction temperature (TJ) should be between -55°C and 150°C.
- Store the device in an environment with a temperature range of -55°C to 150°C.
Capacitance and Charge:
- Be aware of the input (Ciss), output (Coss), and reverse transfer (Crss) capacitances for circuit design.
- The total gate charge (QG) is 38 nC, which affects switching performance.
On-State and Threshold Characteristics:
- The on-state resistance (RDS(on)) is 0.085 to 0.12 Ω at VGS = 10 V and ID = 13 A.
- The gate threshold voltage (VGS(th)) ranges from 1.0 to 3.0 V.
Leakage Current:
- The drain-source leakage current (IDSS) should not exceed 1 μA at VDS = 100 V and TJ = 25°C.
Handling Precautions:
- Handle the device with care to avoid static discharge, which can damage the sensitive components.
- Follow proper soldering techniques to ensure reliable connections and prevent thermal stress.
By adhering to these parameters and instructions, you can ensure the optimal performance and longevity of the FQD13N10L MOSFET.
(For reference only)Inquiry - FQD13N10L
