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Specifications
SKU: 11712185
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 60 | - | V | Continuous |
| Gate-Source Voltage | VGS | -15 | - | 15 | V | Continuous |
| Continuous Drain Current | ID | - | 2.8 | - | A | TC = 25°C, VDS = 60V, VGS = 10V |
| Continuous Drain Current | ID | - | 2.3 | - | A | TC = 70°C, VDS = 60V, VGS = 10V |
| Continuous Drain Current | ID | - | 1.8 | - | A | TC = 100°C, VDS = 60V, VGS = 10V |
| Pulse Drain Current | ID(pulse) | - | 7.2 | - | A | tp = 10ms, IG = 1A, VDS = 60V, VGS = 10V |
| Gate Charge | QG | - | 20 | - | nC | VGS = 10V, ID = 2.8A |
| Input Capacitance | Ciss | - | 1400 | - | pF | VDS = 10V, f = 1MHz |
| Output Capacitance | Coss | - | 280 | - | pF | VDS = 10V, f = 1MHz |
| Reverse Transfer Capacitance | Crss | - | 220 | - | pF | VDS = 10V, f = 1MHz |
| On-State Resistance | RDS(on) | - | 0.025 | - | Ω | VGS = 10V, ID = 2.8A, TJ = 25°C |
| On-State Resistance | RDS(on) | - | 0.035 | - | Ω | VGS = 10V, ID = 2.8A, TJ = 100°C |
| Threshold Voltage | VGS(th) | 1.0 | 1.5 | 2.0 | V | ID = 250μA, TJ = 25°C |
| Power Dissipation | PTOT | - | 3.6 | - | W | TC = 25°C, RθJC = 1.5K/W |
| Junction Temperature | TJ | - | - | 150 | °C | - |
| Storage Temperature | TSTG | -55 | - | 150 | °C | - |
Instructions for Use:
Voltage Ratings:
- Ensure that the drain-source voltage (VDS) does not exceed 60V.
- The gate-source voltage (VGS) should be kept between -15V and +15V.
Current Ratings:
- The continuous drain current (ID) should not exceed 2.8A at 25°C, 2.3A at 70°C, and 1.8A at 100°C.
- For pulse conditions, the maximum drain current (ID(pulse)) is 7.2A for a pulse duration of 10ms.
Thermal Management:
- The power dissipation (PTOT) should not exceed 3.6W at a case temperature (TC) of 25°C.
- The junction temperature (TJ) must not exceed 150°C.
- Use appropriate heat sinks or cooling methods to manage the temperature, especially under high current or power conditions.
Gate Drive:
- Apply a gate-source voltage (VGS) of at least 10V to ensure the MOSFET is fully on and to minimize on-state resistance (RDS(on)).
- Be aware of the threshold voltage (VGS(th)) range of 1.0V to 2.0V to avoid partial turn-on and potential overheating.
Capacitance Considerations:
- Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) when designing circuits to minimize switching losses and ensure stable operation.
Storage and Handling:
- Store the device within the storage temperature range of -55°C to 150°C.
- Handle with care to avoid damage from electrostatic discharge (ESD).
By following these guidelines, you can ensure reliable and efficient operation of the BSC028N06NS MOSFET.
(For reference only)Inquiry - BSC028N06NS
