Instructions for Use:

1. Input Voltage (VIN):

   • Ensure the input voltage does not exceed 65V to avoid damaging the device.
   • The minimum input voltage is -0.3V to prevent reverse bias issues.

2. Continuous Current (ICONT):

   • The device can handle a continuous current of up to 28A at an ambient temperature of 25°C.
   • For higher temperatures, derate the current according to the thermal resistance and heat dissipation capabilities.

3. Peak Current (IPK):

   • The peak current should not exceed 56A for pulses of 100 μs duration.
   • Ensure that the pulse width and frequency are within the safe operating area (SOA) of the device.

4. RDS(on) (On-State Resistance):

   • The on-state resistance is typically 3.5 mΩ at 25°C with a gate-source voltage (VGS) of 10V.
   • This value can vary between 4.5 mΩ and 5 mΩ depending on temperature and other conditions.

5. Gate Charge (QG):

   • The total gate charge is 11 nC, which affects the switching speed and drive requirements.
   • Ensure the gate driver can supply the necessary current to charge and discharge the gate quickly.

6. Reverse Recovery Time (trr):

   • The reverse recovery time is 70 ns, which is important for high-frequency applications.
   • Design the circuit to account for this time to avoid excessive power dissipation during switching.

7. Junction Temperature (TJ):

   • The operating junction temperature range is from -55°C to 150°C.
   • Monitor the junction temperature to ensure it stays within this range to prevent thermal damage.

8. Storage Temperature (TSTG):

   • Store the device in an environment where the temperature ranges from -55°C to 150°C.
   • Avoid exposing the device to extreme temperatures outside this range to prevent degradation.

Additional Notes:

• Always refer to the datasheet for more detailed information and specific application notes.
• Proper heat sinking and cooling mechanisms may be required for high-power applications to maintain the device within its safe operating limits.