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AT45DB011D-SH-B

Specifications

SKU: 11717271

BUY AT45DB011D-SH-B https://www.utsource.net/itm/p/11717271.html

Parameter Description Min Typ Max Unit
Capacity Memory size - 1 - Mbit
VCC Operating voltage 2.7 - 3.6 V
ICC (Read) Current consumption during read operation - 15 - mA
ICC (Write) Current consumption during write operation - 20 - mA
ICC (Standby) Current consumption during standby - 1 - μA
fCLK Clock frequency 0 - 66 MHz
tPROG Page program time 2.5 - 3.5 ms
tERASE Block erase time 30 - 35 ms
tSTANDBY Standby mode entry time 0 - 0.1 μs
tWAKEUP Wake-up time from standby 0 - 0.1 μs
Operating Temperature Range for normal operation -40 - 85 °C
Storage Temperature Range for storage -65 - 150 °C

Instructions

  1. Power Supply:

    • Ensure the supply voltage (VCC) is within the range of 2.7V to 3.6V.
    • Connect the VCC pin to the power supply and the GND pin to ground.
  2. Clock Signal:

    • Provide a clock signal (fCLK) with a frequency between 0 MHz and 66 MHz to the CLK pin.
  3. Data Operations:

    • For read operations, the current consumption (ICC (Read)) is typically 15 mA.
    • For write operations, the current consumption (ICC (Write)) is typically 20 mA.
    • The page program time (tPROG) is between 2.5 ms and 3.5 ms.
    • The block erase time (tERASE) is between 30 ms and 35 ms.
  4. Standby Mode:

    • To enter standby mode, the device will consume approximately 1 μA (ICC (Standby)).
    • The entry time to standby mode (tSTANDBY) is 0.1 μs or less.
    • The wake-up time from standby mode (tWAKEUP) is also 0.1 μs or less.
  5. Temperature Considerations:

    • The operating temperature range is from -40°C to 85°C.
    • The storage temperature range is from -65°C to 150°C.
  6. Pin Configuration:

    • Refer to the datasheet for detailed pin configuration and connections.
  7. Programming and Erasing:

    • Use the appropriate commands to program and erase the memory. Refer to the command set in the datasheet for specific instructions.
  8. Handling Precautions:

    • Handle the device with care to avoid static damage.
    • Follow recommended handling and storage guidelines to ensure reliability.
(For reference only)

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