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Specifications
SKU: 11720307
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 80 | V |
| Collector-Base Voltage | VCBO | - | - | 90 | V |
| Emitter-Base Voltage (Reverse) | VEBO | - | - | 5 | V |
| Collector Current (Continuous) | IC | - | 15 | - | A |
| Collector Current (Pulse) | IC(P) | - | 30 | - | A |
| Base Current (Continuous) | IB | - | 1.5 | - | A |
| Power Dissipation | PT | - | 130 | - | W |
| Junction Temperature | TJ | -20 | - | 150 | °C |
| Storage Temperature | TSTG | -55 | - | 150 | °C |
| Thermal Resistance (Junction to Case) | RθJC | - | 1.2 | - | °C/W |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified limits.
- Use a suitable heatsink with thermal grease to enhance heat dissipation.
Biasing:
- Apply base current (IB) carefully to avoid exceeding the maximum base current rating.
- Ensure that the collector current (IC) does not exceed the continuous or pulse ratings.
Voltage Ratings:
- Do not exceed the maximum collector-emitter voltage (VCEO), collector-base voltage (VCBO), or emitter-base voltage (VEBO).
Power Dissipation:
- Keep the power dissipation (PT) within the specified limit to prevent overheating and potential damage to the transistor.
Temperature Considerations:
- Operate the transistor within the specified junction temperature (TJ) and storage temperature (TSTG) ranges.
- Monitor the ambient temperature and adjust the heat sink accordingly.
Handling:
- Handle the transistor with care to avoid mechanical damage.
- Use anti-static precautions to prevent electrostatic discharge (ESD) damage.
Storage:
- Store the transistor in a dry, cool place away from direct sunlight and extreme temperatures.
By following these instructions, you can ensure optimal performance and longevity of the 2SC4706 transistor.
(For reference only)Inquiry - 2SC4706
