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P16NE06

Specifications

SKU: 11720534

BUY P16NE06 https://www.utsource.net/itm/p/11720534.html

Parameter Symbol Min Typ Max Unit Notes
Drain-Source Voltage VDSS - - 600 V
Gate-Source Voltage VGS -20 - 20 V
Continuous Drain Current ID - 16 - A @ Tc = 25°C
Pulse Drain Current Ipp - 48 - A @ Tc = 25°C, 10 ms, 1% Duty Cycle
Power Dissipation PD - - 130 W @ Tc = 25°C
Junction Temperature TJ -55 - 150 °C
Storage Temperature Tstg -55 - 150 °C
Thermal Resistance RθJC - 0.75 - °C/W Junction to Case
Total Gate Charge Qg - 130 - nC @ VDS = 400V, ID = 10A, VGS = 15V
Input Capacitance Ciss - 2900 - pF @ VDS = 400V, f = 1 MHz
Output Capacitance Coss - 650 - pF @ VDS = 400V, f = 1 MHz
Reverse Transfer Capacitance Crss - 650 - pF @ VDS = 400V, f = 1 MHz

Instructions for Use:

  1. Handling Precautions:

    • Handle the P16NE06 with care to avoid damage to the pins and the device.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.
  2. Mounting:

    • Ensure that the device is mounted on a heatsink to dissipate heat effectively, especially when operating at high power levels.
    • Use thermal compound between the device and the heatsink to improve thermal conductivity.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified range (-20V to +20V).
    • Ensure that the drain-source voltage (VDS) does not exceed 600V.
  4. Current Handling:

    • The continuous drain current (ID) should not exceed 16A at a case temperature of 25°C.
    • For pulse applications, the peak drain current (Ipp) can be up to 48A, but ensure the duty cycle is 1% or less and the pulse duration is 10 ms or less.
  5. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it stays within the operational range (-55°C to 150°C).
    • Use the thermal resistance (RθJC) value to calculate the required heatsink size for your application.
  6. Storage:

    • Store the device in a dry, cool place within the storage temperature range (-55°C to 150°C).
  7. Testing:

    • When testing the device, use appropriate test equipment and follow safety guidelines to prevent damage to the device or injury.
  8. Documentation:

    • Refer to the datasheet for more detailed information and specific application notes.
(For reference only)

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