Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry, cool place to avoid moisture damage.
   • Handle the device with care to avoid mechanical damage or electrostatic discharge (ESD).

2. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified limits.
   • Use thermal paste between the heat sink and the device for better thermal conductivity.

3. Electrical Connections:

   • Connect the gate, drain, and source terminals correctly to avoid damage.
   • Use short, low-inductance leads for high-frequency applications to minimize parasitic inductance.

4. Biasing:

   • Apply the correct gate-source voltage (VGS) to ensure the MOSFET operates within its safe operating area (SOA).
   • Avoid exceeding the maximum gate-source voltage (VGS) to prevent gate oxide breakdown.

5. Thermal Management:

   • Monitor the junction temperature (TJ) to ensure it does not exceed 150°C.
   • Use a heatsink or forced air cooling if necessary to keep the device within its thermal limits.

6. Pulse Operation:

   • For pulse operation, ensure that the peak current (IDM) does not exceed 140A for more than 10ms.
   • Verify that the power dissipation during the pulse does not exceed the rated power dissipation at the given temperature.

7. Testing:

   • Use appropriate test equipment to verify the electrical parameters of the device.
   • Perform tests under controlled conditions to avoid damage from overvoltage or overcurrent.

8. Compliance:

   • Ensure that the device is used in compliance with all relevant safety and regulatory standards.

By following these guidelines, you can ensure reliable and efficient operation of the PK650BA DFN5*6-8-EP N-CH 30V 70A MOSFET.