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STD11N65M5,11N65M5

Specifications

SKU: 11721245

BUY STD11N65M5,11N65M5 https://www.utsource.net/itm/p/11721245.html

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 650 V
Collector-Base Voltage VCBO 700 V
Emitter-Base Voltage VEBO 7 V
Continuous Collector Current IC 11 A
Continuous Collector Dissipation Ptot 200 W
Junction Temperature TJ -55 to 150 °C
Storage Temperature Tstg -65 to 150 °C
Base-Emitter Saturation Voltage VBE(sat) 1.8 (max) V
Collector-Emitter Saturation Voltage VCE(sat) 1.3 (max) V
Turn-On Delay Time td(on) 290 (max) ns
Rise Time tr 125 (max) ns
Turn-Off Delay Time td(off) 290 (max) ns
Fall Time tf 125 (max) ns

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Use thermal compound between the transistor and the heat sink for better thermal conductivity.
  2. Biasing:

    • Ensure that the base-emitter voltage (VBE) is within the specified range to avoid damage.
    • Use appropriate resistors to limit base current and prevent excessive power dissipation.
  3. Operation:

    • Do not exceed the maximum collector-emitter voltage (VCEO) or collector current (IC).
    • Keep the junction temperature (TJ) within the operational range to ensure reliable performance.
  4. Storage:

    • Store the device in a dry, cool place within the storage temperature range (Tstg).
  5. Handling:

    • Handle with care to avoid mechanical damage.
    • Use anti-static precautions to prevent electrostatic discharge (ESD) damage.
  6. Testing:

    • Use appropriate test equipment and methods to verify the device parameters.
    • Follow safety guidelines when testing high-voltage and high-current circuits.
(For reference only)

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