Specifications
SKU: 11721245
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 650 | V |
Collector-Base Voltage | VCBO | 700 | V |
Emitter-Base Voltage | VEBO | 7 | V |
Continuous Collector Current | IC | 11 | A |
Continuous Collector Dissipation | Ptot | 200 | W |
Junction Temperature | TJ | -55 to 150 | °C |
Storage Temperature | Tstg | -65 to 150 | °C |
Base-Emitter Saturation Voltage | VBE(sat) | 1.8 (max) | V |
Collector-Emitter Saturation Voltage | VCE(sat) | 1.3 (max) | V |
Turn-On Delay Time | td(on) | 290 (max) | ns |
Rise Time | tr | 125 (max) | ns |
Turn-Off Delay Time | td(off) | 290 (max) | ns |
Fall Time | tf | 125 (max) | ns |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use thermal compound between the transistor and the heat sink for better thermal conductivity.
Biasing:
- Ensure that the base-emitter voltage (VBE) is within the specified range to avoid damage.
- Use appropriate resistors to limit base current and prevent excessive power dissipation.
Operation:
- Do not exceed the maximum collector-emitter voltage (VCEO) or collector current (IC).
- Keep the junction temperature (TJ) within the operational range to ensure reliable performance.
Storage:
- Store the device in a dry, cool place within the storage temperature range (Tstg).
Handling:
- Handle with care to avoid mechanical damage.
- Use anti-static precautions to prevent electrostatic discharge (ESD) damage.
Testing:
- Use appropriate test equipment and methods to verify the device parameters.
- Follow safety guidelines when testing high-voltage and high-current circuits.
Inquiry - STD11N65M5,11N65M5