Specifications
SKU: 11722890
Parameter | IRG4BC30KDPBF | IRG4BC30KD | G4BC30KD |
---|---|---|---|
Part Number | IRG4BC30KDPBF | IRG4BC30KD | G4BC30KD |
Type | MOSFET | MOSFET | MOSFET |
Package | D2PAK (TO-263) | D2PAK (TO-263) | D2PAK (TO-263) |
VDSS (V) | 550 | 550 | 550 |
RDS(on) (Ω) | 0.18 (at VGS=10V) | 0.18 (at VGS=10V) | 0.18 (at VGS=10V) |
ID (A) | 30 | 30 | 30 |
Ptot (W) | 170 | 170 | 170 |
Qg (nC) | 140 | 140 | 140 |
Qgd (nC) | 38 | 38 | 38 |
fT (MHz) | 1.6 | 1.6 | 1.6 |
VGS(th) (V) | 2.0 to 4.0 | 2.0 to 4.0 | 2.0 to 4.0 |
Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 150 |
Storage Temperature (°C) | -65 to 150 | -65 to 150 | -65 to 150 |
Moisture Sensitivity Level (MSL) | 3 (168 hours) | 3 (168 hours) | 3 (168 hours) |
Instructions:
Handling Precautions:
- ESD Protection: These devices are sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and assembly.
- Moisture Sensitivity: Store the devices in a dry environment and follow the reflow soldering guidelines for moisture-sensitive components.
Mounting and Assembly:
- Heatsinking: Ensure adequate heatsinking to manage the power dissipation, especially when operating at high currents or in high ambient temperatures.
- Soldering: Follow the recommended soldering profiles for D2PAK packages to avoid thermal shock and ensure reliable connections.
Electrical Characteristics:
- VGS Range: Operate within the specified gate-to-source voltage range to prevent damage to the device.
- RDS(on): The on-state resistance is highly dependent on the gate-to-source voltage. Ensure VGS is sufficient to minimize RDS(on) and reduce power losses.
Thermal Management:
- Thermal Resistance: The thermal resistance (RθJC) from junction to case should be considered in the design to ensure the junction temperature does not exceed the maximum rating.
Testing and Validation:
- Parameter Verification: Verify key parameters such as VDSS, ID, and RDS(on) during testing to ensure the device meets the required specifications.
Application Notes:
- Circuit Design: Refer to the datasheet and application notes for specific circuit design recommendations, including gate drive circuits and snubber networks for high-frequency applications.
For detailed information, refer to the datasheets provided by the manufacturer.
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