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IPD122N10N3G,122N10N

Specifications

SKU: 11722929

BUY IPD122N10N3G,122N10N https://www.utsource.net/itm/p/11722929.html

Parameter Symbol Min Typ Max Unit
Drain-Source Voltage VDS - - 100 V
Gate-Source Voltage VGS -15 - 15 V
Continuous Drain Current ID - 122 - A
Pulse Drain Current (tp = 10 μs) IDpeak - 366 - A
Power Dissipation PTOT - - 250 W
Junction Temperature TJ -55 - 175 °C
Storage Temperature Range Tstg -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Handle the device with care to avoid mechanical damage.
    • Ensure proper heat sinking to manage thermal dissipation effectively.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Use short and wide leads to minimize inductance and resistance.
  3. Gate Drive:

    • Apply a gate-source voltage (VGS) within the specified range to ensure reliable operation.
    • Use a gate resistor to control the switching speed and reduce ringing.
  4. Thermal Management:

    • Ensure the junction temperature (TJ) remains within the specified limits.
    • Use a heatsink or cooling solution to dissipate heat effectively.
  5. Storage and Operation:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Operate the device within the specified storage temperature range to avoid damage.
  6. Surge Current:

    • Be cautious with surge currents; the pulse drain current (IDpeak) should not be exceeded for durations longer than specified.
  7. Safety Precautions:

    • Follow all safety guidelines to prevent electrical shock and damage to equipment.
    • Use appropriate protective gear when handling high-voltage circuits.
  8. Testing:

    • Perform initial testing under controlled conditions to verify correct operation.
    • Monitor performance parameters regularly to ensure continued reliability.
(For reference only)

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