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Specifications
SKU: 11724761
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 500 | - | V | Maximum voltage that can be applied between the drain and source terminals with the gate open. |
| Gate-Source Voltage | VGS | -15 | 0 | 20 | V | Maximum voltage that can be applied between the gate and source terminals. |
| Continuous Drain Current | ID | - | 12 | - | A | Maximum continuous current that can flow through the drain terminal when the device is on. |
| Pulse Drain Current | ID(p) | - | 36 | - | A | Maximum pulse current that can flow through the drain terminal for a short duration (typically 10 ms). |
| Power Dissipation | PD | - | - | 120 | W | Maximum power dissipation at the specified operating conditions. |
| Junction Temperature | TJ | - | - | 150 | °C | Maximum temperature of the semiconductor junction. |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | Temperature range over which the device can be stored without damage. |
| Total Gate Charge | QG | - | 80 | - | nC | Total charge required to switch the device from off to on state. |
| Input Capacitance | Ciss | - | 1700 | - | pF | Capacitance measured between the gate and source terminals with the drain shorted to the source. |
| Output Capacitance | Coss | - | 420 | - | pF | Capacitance measured between the drain and source terminals with the gate shorted to the source. |
| Reverse Transfer Capacitance | Crss | - | 340 | - | pF | Capacitance measured between the gate and drain terminals with the source grounded. |
| On-State Resistance | RDS(on) | - | 0.55 | - | Ω | Resistance between the drain and source terminals when the device is fully on. |
| Gate Threshold Voltage | VGS(th) | 2.0 | 4.0 | 6.0 | V | Minimum gate-to-source voltage required to start turning the device on. |
Instructions for Use:
Handling and Storage:
- Store the device in a dry, cool place within the specified storage temperature range.
- Handle the device with care to avoid mechanical damage or electrostatic discharge (ESD).
Mounting:
- Ensure proper heat sinking to manage the maximum power dissipation and junction temperature.
- Follow the recommended PCB layout guidelines to minimize parasitic inductances and capacitances.
Biasing:
- Apply the gate-source voltage (VGS) within the specified limits to avoid damaging the device.
- Use appropriate gate drive circuits to ensure reliable switching and minimize switching losses.
Current Limiting:
- Do not exceed the continuous drain current (ID) or pulse drain current (ID(p)) ratings.
- Implement current limiting or protection circuits if necessary to prevent overcurrent conditions.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed the maximum rating.
- Use thermal vias and adequate heatsinks to dissipate heat effectively.
Capacitance Considerations:
- Account for the input, output, and reverse transfer capacitances in your circuit design to optimize performance and reduce switching losses.
Testing:
- Test the device under controlled conditions to verify its performance and reliability.
- Refer to the datasheet for specific test conditions and procedures.
Safety:
- Follow all safety guidelines and regulations when handling and using the device.
- Ensure that the device is properly isolated and protected from overvoltage and overcurrent conditions.
Inquiry - P12NM50FP
