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Specifications
SKU: 11724764
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 550 | V | Maximum voltage between drain and source with the gate open. |
| Gate-Source Voltage | VGS | -15 | - | 20 | V | Maximum voltage between gate and source. |
| Continuous Drain Current | ID | - | 80 | - | A | Continuous current flowing from drain to source at TJ = 25°C. |
| Pulse Drain Current | ID(p) | - | 160 | - | A | Peak pulse current flowing from drain to source at TC = 25°C, tp = 10 μs. |
| Power Dissipation | PTOT | - | - | 340 | W | Total power dissipation at TC = 25°C. |
| Junction Temperature | TJ | - | - | 175 | °C | Maximum operating junction temperature. |
| Storage Temperature | TSTG | -55 | - | 150 | °C | Temperature range for storage and non-operating conditions. |
| Thermal Resistance | RθJC | - | 0.5 | - | °C/W | Junction-to-case thermal resistance. |
Instructions for Use:
Handling Precautions:
- Handle the P80NF55 with care to avoid static discharge which can damage the device.
- Use proper ESD (Electrostatic Discharge) protection equipment when handling the component.
Mounting:
- Ensure that the mounting surface is clean and flat to ensure good thermal contact.
- Apply a thin layer of thermal compound between the device and the heat sink to improve thermal conductivity.
Biasing:
- Apply the gate-source voltage (VGS) within the specified limits to avoid damaging the gate oxide.
- Ensure that the gate-source voltage is stable and free from excessive noise.
Current Limiting:
- Use appropriate current limiting resistors or circuits to prevent exceeding the maximum continuous drain current (ID).
- For pulse applications, ensure that the pulse duration does not exceed the specified limits to avoid overheating.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed the maximum operating temperature.
- Use a heat sink with adequate cooling capacity to dissipate the power generated by the device.
Storage:
- Store the P80NF55 in a dry, cool place within the specified storage temperature range.
- Avoid exposure to extreme temperatures and humidity to prevent degradation of the component.
Testing:
- Use a suitable test setup to verify the performance of the P80NF55 before integrating it into a circuit.
- Follow the datasheet specifications for testing parameters and conditions.
Inquiry - P80NF55
