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6R190P6

Specifications

SKU: 11725081

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The 6R190P6 is a N-channel enhancement mode MOSFET transistor manufactured by STMicroelectronics. It is housed in a TO-220 package and has a drain-source voltage rating of 200 V. Description: The 6R190P6 is a N-channel enhancement mode MOSFET transistor with a maximum drain current rating of 6 A. It has a maximum drain-source voltage rating of 200 V and a maximum gate-source voltage rating of 20 V. Features: Low RDS(on) Low gate charge Low input capacitance Fast switching Avalanche rated Applications: The 6R190P6 is suitable for use in applications such as DC-DC converters, motor control, and power management. It can also be used in switching power supplies, battery management systems, and automotive applications. (For reference only)

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