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K4A60DA

Specifications

SKU: 11728197

BUY K4A60DA https://www.utsource.net/itm/p/11728197.html

Parameter Description Value
Device Type Memory Type DRAM
Density Storage Capacity 8 Gb (1 Gx8)
Organization Internal Organization 8 Banks x 16M x 8-bit
Supply Voltage (VDD, VDDQ) Operating Voltage 1.35V ± 0.135V
I/O Standard I/O Standard SSTL-15 or SSTL-18
Data Rate Data Transfer Rate 800 to 2133 Mbps
CAS Latency (CL) CAS Latency 6, 7, 8, 9, 10, 11, 12, 13, 14, 15
Operating Temperature Temperature Range -40°C to 85°C (Commercial)
Package Package Type BGA (Ball Grid Array)
Pin Count Number of Pins 78-Pin
Refresh Rate Refresh Cycle Time 7.8 μs (tREFI)
Row Address Strobe (RAS) to Column Address Strobe (CAS) Delay RAS to CAS Delay 10, 12, 14, 16, 18, 20, 22, 24, 26, 28 ns
Write Recovery Time (tWR) Write Recovery Time 12.5, 15, 17.5, 20 ns
Active to Precharge Delay (tRAS) Active to Precharge Delay 35, 40, 45 ns
Precharge to Active Delay (tRP) Precharge to Active Delay 12.5, 15, 17.5, 20 ns
Cycle Time (tRC) Cycle Time 47.5, 55, 62.5, 70 ns
Power Consumption Typical Power Consumption 1.5W (Active), 0.1W (Idle)

Instructions for Using K4A60DA:

  1. Power Supply:

    • Ensure that the supply voltage (VDD, VDDQ) is within the specified range of 1.35V ± 0.135V.
    • Use a stable power supply to avoid voltage fluctuations.
  2. Signal Integrity:

    • Use proper termination techniques to minimize signal reflections and ensure reliable data transfer.
    • Keep signal traces as short as possible to reduce noise and crosstalk.
  3. Timing Parameters:

    • Configure the memory controller to match the timing parameters specified in the table.
    • Adjust the CAS latency (CL) and other timing parameters based on the desired data rate and system requirements.
  4. Temperature Management:

    • Operate the device within the specified temperature range (-40°C to 85°C).
    • Use appropriate cooling solutions if operating in high-temperature environments.
  5. Initialization:

    • Follow the initialization sequence recommended by the memory controller to ensure proper operation.
    • Perform a self-refresh mode during idle periods to maintain data integrity.
  6. Error Handling:

    • Implement error detection and correction (ECC) mechanisms if required for your application.
    • Monitor the memory for any errors and take corrective actions as needed.
  7. Testing:

    • Perform thorough testing of the memory module to ensure it meets the performance and reliability standards.
    • Use diagnostic tools to verify the correct operation of the memory.
  8. Storage and Handling:

    • Store the device in a dry and static-free environment.
    • Handle the device with care to avoid physical damage to the BGA package.
(For reference only)

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