Specifications
SKU: 11728200
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCE | 500 | V |
Collector Current | IC | 13 | A |
Emitter-Base Voltage | VEB | 5 | V |
Base Current | IB | 1.3 | A |
Power Dissipation | PT | 125 | W |
Junction Temperature | TJ | -55 to +150 | °C |
Storage Temperature | TSTG | -65 to +150 | °C |
Case Type | TO-220 |
Instructions for Use:
Mounting:
- Ensure proper heat dissipation by using a heatsink if necessary.
- Mount the transistor with the correct orientation to avoid damage.
Electrical Connections:
- Connect the collector (C) to the high voltage side of the circuit.
- Connect the emitter (E) to the low voltage side or ground.
- Connect the base (B) to the control circuit.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Ensure that the junction temperature remains within the specified range to prevent thermal runaway.
Storage:
- Store in a dry, cool place to avoid moisture damage.
- Handle with care to prevent mechanical stress on the leads and case.
Testing:
- Use appropriate test equipment to verify the functionality of the transistor.
- Test under controlled conditions to avoid exceeding safe operating limits.
Safety:
- Always follow safety guidelines when working with high voltages and currents.
- Use protective equipment such as gloves and goggles when handling the transistor.
Inquiry - GPT13N50DG