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GPT13N50DG

Specifications

SKU: 11728200

BUY GPT13N50DG https://www.utsource.net/itm/p/11728200.html

Parameter Symbol Value Unit
Collector-Emitter Voltage VCE 500 V
Collector Current IC 13 A
Emitter-Base Voltage VEB 5 V
Base Current IB 1.3 A
Power Dissipation PT 125 W
Junction Temperature TJ -55 to +150 °C
Storage Temperature TSTG -65 to +150 °C
Case Type TO-220

Instructions for Use:

  1. Mounting:

    • Ensure proper heat dissipation by using a heatsink if necessary.
    • Mount the transistor with the correct orientation to avoid damage.
  2. Electrical Connections:

    • Connect the collector (C) to the high voltage side of the circuit.
    • Connect the emitter (E) to the low voltage side or ground.
    • Connect the base (B) to the control circuit.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Ensure that the junction temperature remains within the specified range to prevent thermal runaway.
  4. Storage:

    • Store in a dry, cool place to avoid moisture damage.
    • Handle with care to prevent mechanical stress on the leads and case.
  5. Testing:

    • Use appropriate test equipment to verify the functionality of the transistor.
    • Test under controlled conditions to avoid exceeding safe operating limits.
  6. Safety:

    • Always follow safety guidelines when working with high voltages and currents.
    • Use protective equipment such as gloves and goggles when handling the transistor.
(For reference only)

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