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Specifications
SKU: 11729716
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage (Max) | Vds(max) | 500 | V |
| Gate-Source Voltage (Max) | Vgs(max) | ±20 | V |
| Continuous Drain Current (Tc=25°C) | Id | 20 | A |
| Continuous Drain Current (Tc=100°C) | Id | 15 | A |
| Pulse Drain Current (Tc=25°C, t=10ms) | Idp | 40 | A |
| Transconductance (Min) | Gfs(min) | 12 | S |
| Input Capacitance | Ciss | 2700 | pF |
| Output Capacitance | Coss | 250 | pF |
| Reverse Transfer Capacitance | Crss | 300 | pF |
| Gate Threshold Voltage | Vth | 2 to 4 | V |
| Total Power Dissipation (Tc=25°C) | Ptot | 200 | W |
| Total Power Dissipation (Tc=100°C) | Ptot | 150 | W |
| Junction Temperature (Max) | Tj(max) | 175 | °C |
| Storage Temperature Range | Tstg | -55 to 175 | °C |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified range.
- Use a thermal compound between the transistor and the heatsink to improve thermal conductivity.
Biasing:
- Apply the gate-source voltage (Vgs) carefully to avoid exceeding the maximum ratings.
- Ensure that the gate is properly decoupled to prevent oscillations.
Operation:
- Operate the device within the continuous drain current limits for reliable performance.
- For pulse applications, ensure that the pulse duration and frequency do not exceed the specified pulse drain current limits.
Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- Handle with care to avoid mechanical stress or damage to the leads.
Testing:
- Use appropriate test equipment and procedures to avoid damaging the device during testing.
- Verify all connections and settings before applying power.
Safety:
- Always follow standard safety practices when handling high-voltage and high-current circuits.
- Use protective equipment as necessary.
Inquiry - 2SK2312
