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CAT28C64BK-15

Specifications

SKU: 11730701

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Parameter Description Value Unit
Device Type Non-Volatile Memory 64K x 8-Bit CMOS EEPROM -
Operating Voltage (Vcc) Supply Voltage Range 2.5 to 5.5 V
Standby Current Typical Current Consumption in Standby Mode 1 μA
Active Current Typical Current Consumption in Active Mode 3 mA
Write Cycle Time Time Required for a Complete Write Operation 5 ms
Data Retention Guaranteed Data Retention 100 years
Endurance Number of Write/Erase Cycles 1,000,000 cycles
Operating Temperature Range Temperature Range for Normal Operation -40 to +85 °C
Storage Temperature Range Temperature Range for Storage -65 to +150 °C
Package Type Type of Package SOIC-8 -
Organization Memory Organization 8K x 8 -
Access Time Time Required for a Read Operation 150 ns
Write Protect Feature to Prevent Accidental Writes Pin Selectable -

Instructions for Use:

  1. Power Supply:

    • Ensure the supply voltage (Vcc) is within the range of 2.5V to 5.5V.
    • Connect the ground (GND) pin to the system ground.
  2. Addressing:

    • The device has 13 address lines (A0-A12) to access the 8K x 8 memory locations.
  3. Data Input/Output:

    • Data is input or output through the 8 data lines (D0-D7).
  4. Control Signals:

    • Chip Select (CS#): Active low signal to select the device.
    • Write Enable (WE#): Active low signal to initiate a write operation.
    • Output Enable (OE#): Active low signal to enable data output.
  5. Write Operation:

    • Set CS# and WE# low to initiate a write cycle.
    • Apply the desired address to the address lines (A0-A12).
    • Apply the data to be written to the data lines (D0-D7).
    • Hold CS# and WE# low for at least 5ms to complete the write cycle.
    • Return CS# and WE# high to end the write cycle.
  6. Read Operation:

    • Set CS# and OE# low to initiate a read cycle.
    • Apply the desired address to the address lines (A0-A12).
    • The data will be available on the data lines (D0-D7) after the access time (150ns).
    • Return CS# and OE# high to end the read cycle.
  7. Write Protect:

    • The write protect feature can be enabled by setting the WP# pin to low. This prevents any write operations to the memory.
  8. Storage and Handling:

    • Store the device in a temperature range of -65°C to +150°C.
    • Handle the device with care to avoid static damage and physical stress.
  9. Endurance and Data Retention:

    • The device supports up to 1,000,000 write/erase cycles.
    • Data retention is guaranteed for 100 years under normal operating conditions.
(For reference only)

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