Specifications
SKU: 11730762
Parameter | Symbol | Value | Unit |
---|---|---|---|
Maximum Drain-Source Voltage | VDS(max) | 600 | V |
Maximum Gate-Source Voltage | VGS(max) | ±20 | V |
Continuous Drain Current (TC = 25°C) | ID | 15 | A |
Continuous Drain Current (TC = 100°C) | ID | 11 | A |
Pulse Drain Current (TC = 25°C, 10 μs) | IDM | 120 | A |
Power Dissipation (TC = 25°C) | PD | 360 | W |
Junction Temperature | TJ | -55 to +175 | °C |
Storage Temperature | TSTG | -55 to +150 | °C |
Thermal Resistance, Junction to Case | RθJC | 0.8 | °C/W |
Instructions for Use:
Handling and Storage:
- Store the G15N60=SGP15N60 in a dry, cool environment.
- Avoid exposure to high humidity and temperatures outside the storage temperature range.
Mounting:
- Ensure proper heat sinking to manage the junction temperature, especially under high power conditions.
- Use a thermal compound between the device and the heat sink to improve thermal conductivity.
Electrical Connections:
- Connect the drain (D), gate (G), and source (S) terminals correctly to avoid damage.
- Apply a suitable gate resistor to control the switching speed and reduce EMI.
Overvoltage Protection:
- Implement overvoltage protection circuits to prevent damage from voltage spikes.
- Consider using snubber circuits to dampen voltage transients.
Operating Conditions:
- Do not exceed the maximum ratings listed in the parameter table.
- Monitor the device temperature to ensure it remains within safe operating limits.
Testing:
- Use appropriate test equipment and procedures to verify the performance of the device.
- Perform initial testing at reduced power levels to ensure correct operation before full-scale use.
Disposal:
- Dispose of the device according to local environmental regulations and guidelines for electronic components.
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