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G15N60=SGP15N60

Specifications

SKU: 11730762

BUY G15N60=SGP15N60 https://www.utsource.net/itm/p/11730762.html

Parameter Symbol Value Unit
Maximum Drain-Source Voltage VDS(max) 600 V
Maximum Gate-Source Voltage VGS(max) ±20 V
Continuous Drain Current (TC = 25°C) ID 15 A
Continuous Drain Current (TC = 100°C) ID 11 A
Pulse Drain Current (TC = 25°C, 10 μs) IDM 120 A
Power Dissipation (TC = 25°C) PD 360 W
Junction Temperature TJ -55 to +175 °C
Storage Temperature TSTG -55 to +150 °C
Thermal Resistance, Junction to Case RθJC 0.8 °C/W

Instructions for Use:

  1. Handling and Storage:

    • Store the G15N60=SGP15N60 in a dry, cool environment.
    • Avoid exposure to high humidity and temperatures outside the storage temperature range.
  2. Mounting:

    • Ensure proper heat sinking to manage the junction temperature, especially under high power conditions.
    • Use a thermal compound between the device and the heat sink to improve thermal conductivity.
  3. Electrical Connections:

    • Connect the drain (D), gate (G), and source (S) terminals correctly to avoid damage.
    • Apply a suitable gate resistor to control the switching speed and reduce EMI.
  4. Overvoltage Protection:

    • Implement overvoltage protection circuits to prevent damage from voltage spikes.
    • Consider using snubber circuits to dampen voltage transients.
  5. Operating Conditions:

    • Do not exceed the maximum ratings listed in the parameter table.
    • Monitor the device temperature to ensure it remains within safe operating limits.
  6. Testing:

    • Use appropriate test equipment and procedures to verify the performance of the device.
    • Perform initial testing at reduced power levels to ensure correct operation before full-scale use.
  7. Disposal:

    • Dispose of the device according to local environmental regulations and guidelines for electronic components.
(For reference only)

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