Specifications
SKU: 11737635
Parameter | Symbol | Min | Typical | Max | Unit | Description |
---|---|---|---|---|---|---|
Breakdown Voltage | V(BR)DSS | - | 600 | - | V | Drain-to-Source Breakdown Voltage |
Continuous Drain Current | ID | - | 13 | - | A | Continuous Drain Current (Tc = 25°C) |
Pulse Drain Current | Ipp | - | 78 | - | A | Non-repetitive Peak Pulse Current (Tc = 25°C, t = 10 μs) |
Gate Threshold Voltage | VGS(th) | 2.0 | 4.0 | 6.0 | V | Gate Threshold Voltage |
On-State Resistance | RDS(on) | - | 0.18 | - | Ω | On-State Resistance at VGS = 10V, ID = 13A |
Total Power Dissipation | PD | - | 130 | - | W | Total Power Dissipation (Tc = 25°C) |
Junction Temperature | Tj | - | - | 175 | °C | Maximum Junction Temperature |
Storage Temperature Range | Tstg | -55 | - | 150 | °C | Storage Temperature Range |
Instructions for Use:
Handling Precautions:
- Handle the device with care to avoid mechanical damage.
- Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
Mounting and Soldering:
- Ensure that the device is mounted on a suitable heatsink to manage heat dissipation.
- Follow recommended soldering profiles to avoid thermal shock and ensure good electrical connections.
Operating Conditions:
- Do not exceed the maximum ratings specified in the table.
- Ensure that the junction temperature does not exceed 175°C to prevent thermal runaway and device failure.
- For continuous operation, keep the drain current within the rated limits to avoid overheating.
Gate Drive:
- Apply a gate voltage between the minimum and maximum gate threshold voltages to turn the device on.
- Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Storage:
- Store the device in a dry, cool place within the specified storage temperature range to maintain its performance and reliability.
Testing:
- Before using the device in a circuit, perform initial testing to verify its parameters and functionality.
- Use appropriate test equipment and methods to ensure accurate measurements.
Circuit Design:
- Incorporate necessary protection circuits such as overvoltage and overcurrent protection to safeguard the device.
- Consider the use of snubber circuits to mitigate voltage spikes during switching.
By following these guidelines, you can ensure optimal performance and longevity of the W13NK60Z MOSFET.
(For reference only)Inquiry - W13NK60Z