Share:


W13NK60Z

Specifications

SKU: 11737635

BUY W13NK60Z https://www.utsource.net/itm/p/11737635.html

Parameter Symbol Min Typical Max Unit Description
Breakdown Voltage V(BR)DSS - 600 - V Drain-to-Source Breakdown Voltage
Continuous Drain Current ID - 13 - A Continuous Drain Current (Tc = 25°C)
Pulse Drain Current Ipp - 78 - A Non-repetitive Peak Pulse Current (Tc = 25°C, t = 10 μs)
Gate Threshold Voltage VGS(th) 2.0 4.0 6.0 V Gate Threshold Voltage
On-State Resistance RDS(on) - 0.18 - Ω On-State Resistance at VGS = 10V, ID = 13A
Total Power Dissipation PD - 130 - W Total Power Dissipation (Tc = 25°C)
Junction Temperature Tj - - 175 °C Maximum Junction Temperature
Storage Temperature Range Tstg -55 - 150 °C Storage Temperature Range

Instructions for Use:

  1. Handling Precautions:

    • Handle the device with care to avoid mechanical damage.
    • Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
  2. Mounting and Soldering:

    • Ensure that the device is mounted on a suitable heatsink to manage heat dissipation.
    • Follow recommended soldering profiles to avoid thermal shock and ensure good electrical connections.
  3. Operating Conditions:

    • Do not exceed the maximum ratings specified in the table.
    • Ensure that the junction temperature does not exceed 175°C to prevent thermal runaway and device failure.
    • For continuous operation, keep the drain current within the rated limits to avoid overheating.
  4. Gate Drive:

    • Apply a gate voltage between the minimum and maximum gate threshold voltages to turn the device on.
    • Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
  5. Storage:

    • Store the device in a dry, cool place within the specified storage temperature range to maintain its performance and reliability.
  6. Testing:

    • Before using the device in a circuit, perform initial testing to verify its parameters and functionality.
    • Use appropriate test equipment and methods to ensure accurate measurements.
  7. Circuit Design:

    • Incorporate necessary protection circuits such as overvoltage and overcurrent protection to safeguard the device.
    • Consider the use of snubber circuits to mitigate voltage spikes during switching.

By following these guidelines, you can ensure optimal performance and longevity of the W13NK60Z MOSFET.

(For reference only)

 Inquiry - W13NK60Z