Specifications
SKU: 11738042
Parameter | Symbol | Min | Typ | Max | Unit | Notes |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 600 | - | V | |
Gate-Source Voltage | VGS | -15 | 0 | 20 | V | |
Continuous Drain Current | ID | - | 48 | - | A | @ TC = 25°C |
Pulse Drain Current | ID pul | - | 150 | - | A | tp = 10 μs, IG = 10 A |
Power Dissipation | PTOT | - | 300 | - | W | @ TC = 25°C |
Junction Temperature | TJ | - | - | 175 | °C | |
Storage Temperature | TSTG | -55 | - | 150 | °C | |
Thermal Resistance | RθJC | - | 0.6 | - | K/W |
Instructions:
Handling and Storage:
- Store in a dry environment to prevent moisture damage.
- Handle with care to avoid mechanical stress on the leads and body.
Mounting:
- Ensure proper heat sinking to maintain junction temperature within safe limits.
- Use a thermal compound between the device and the heat sink for better thermal conductivity.
Electrical Connections:
- Apply gate-source voltage (VGS) carefully to avoid exceeding the maximum ratings.
- Ensure that the drain current (ID) does not exceed the continuous or pulse ratings.
Operational Considerations:
- Monitor the junction temperature (TJ) to prevent overheating.
- Use appropriate derating factors for operation at higher ambient temperatures.
Safety:
- Follow all safety guidelines for high-voltage and high-current applications.
- Ensure proper insulation and grounding to prevent electrical hazards.
Testing:
- Perform initial testing under controlled conditions to verify performance and reliability.
- Regularly inspect the device for signs of wear or damage.
For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.
(For reference only)Inquiry - STW48NM60N 48NM60N STW48NM60 TO-247/3P