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FMH28N50E

Specifications

SKU: 11738223

BUY FMH28N50E https://www.utsource.net/itm/p/11738223.html

Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage VDS - 500 - V
Gate-Source Voltage VGS -15 - 20 V
Continuous Drain Current ID - 28 - A TC = 25°C
Pulse Drain Current ID( pul ) - 47 - A TC = 25°C, tp = 10 μs, Duty Cycle = 1%
Power Dissipation PTOT - 360 - W TC = 25°C
Junction Temperature TJ - - 150 °C
Storage Temperature Range TSTG -55 - 150 °C
Thermal Resistance (Junction to Case) RθJC - 0.42 - °C/W
On-State Resistance RDS(on) - 0.017 - Ω VGS = 10V, ID = 28A, TJ = 25°C
Input Capacitance Ciss - 1800 - pF VDS = 400V, f = 1 MHz
Output Capacitance Coss - 100 - pF VDS = 400V, f = 1 MHz
Reverse Transfer Capacitance Crss - 150 - pF VDS = 400V, f = 1 MHz
Gate Charge QG - 100 - nC VDS = 400V, ID = 28A, VGS = 10V
Turn-On Delay Time td(on) - 25 - ns VDS = 400V, ID = 28A, VGS = 10V, RG = 1Ω
Rise Time tr - 35 - ns VDS = 400V, ID = 28A, VGS = 10V, RG = 1Ω
Turn-Off Delay Time td(off) - 25 - ns VDS = 400V, ID = 28A, VGS = 10V, RG = 1Ω
Fall Time tf - 35 - ns VDS = 400V, ID = 28A, VGS = 10V, RG = 1Ω

Instructions for Use:

  1. Handling Precautions:

    • Handle the FMH28N50E with care to avoid damage to the pins and the die.
    • Use proper ESD protection when handling the device.
  2. Mounting:

    • Ensure proper heat sinking to maintain the junction temperature within safe limits.
    • Use a thermal compound between the device and the heat sink for better thermal conductivity.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified range to avoid damaging the device.
    • Ensure that the gate drive circuitry can provide the necessary current to charge and discharge the gate capacitance quickly.
  4. Operation:

    • Do not exceed the maximum drain-source voltage (VDS) or continuous drain current (ID).
    • Monitor the power dissipation (PTOT) to ensure it does not exceed the maximum rating.
  5. Storage:

    • Store the device in a dry, cool place to prevent moisture damage.
    • Follow the recommended storage temperature range to avoid degradation of the device.
  6. Testing:

    • Use appropriate test equipment and methods to measure the device parameters accurately.
    • Ensure that the test conditions match the specified conditions in the datasheet.
  7. Application Notes:

    • Refer to the application notes provided by the manufacturer for specific design considerations and recommendations.
    • Consider the parasitic inductances and capacitances in the circuit to optimize performance.
(For reference only)

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