Specifications
SKU: 11738223
Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 500 | - | V | |
Gate-Source Voltage | VGS | -15 | - | 20 | V | |
Continuous Drain Current | ID | - | 28 | - | A | TC = 25°C |
Pulse Drain Current | ID( pul ) | - | 47 | - | A | TC = 25°C, tp = 10 μs, Duty Cycle = 1% |
Power Dissipation | PTOT | - | 360 | - | W | TC = 25°C |
Junction Temperature | TJ | - | - | 150 | °C | |
Storage Temperature Range | TSTG | -55 | - | 150 | °C | |
Thermal Resistance (Junction to Case) | RθJC | - | 0.42 | - | °C/W | |
On-State Resistance | RDS(on) | - | 0.017 | - | Ω | VGS = 10V, ID = 28A, TJ = 25°C |
Input Capacitance | Ciss | - | 1800 | - | pF | VDS = 400V, f = 1 MHz |
Output Capacitance | Coss | - | 100 | - | pF | VDS = 400V, f = 1 MHz |
Reverse Transfer Capacitance | Crss | - | 150 | - | pF | VDS = 400V, f = 1 MHz |
Gate Charge | QG | - | 100 | - | nC | VDS = 400V, ID = 28A, VGS = 10V |
Turn-On Delay Time | td(on) | - | 25 | - | ns | VDS = 400V, ID = 28A, VGS = 10V, RG = 1Ω |
Rise Time | tr | - | 35 | - | ns | VDS = 400V, ID = 28A, VGS = 10V, RG = 1Ω |
Turn-Off Delay Time | td(off) | - | 25 | - | ns | VDS = 400V, ID = 28A, VGS = 10V, RG = 1Ω |
Fall Time | tf | - | 35 | - | ns | VDS = 400V, ID = 28A, VGS = 10V, RG = 1Ω |
Instructions for Use:
Handling Precautions:
- Handle the FMH28N50E with care to avoid damage to the pins and the die.
- Use proper ESD protection when handling the device.
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within safe limits.
- Use a thermal compound between the device and the heat sink for better thermal conductivity.
Biasing:
- Apply the gate-source voltage (VGS) within the specified range to avoid damaging the device.
- Ensure that the gate drive circuitry can provide the necessary current to charge and discharge the gate capacitance quickly.
Operation:
- Do not exceed the maximum drain-source voltage (VDS) or continuous drain current (ID).
- Monitor the power dissipation (PTOT) to ensure it does not exceed the maximum rating.
Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Follow the recommended storage temperature range to avoid degradation of the device.
Testing:
- Use appropriate test equipment and methods to measure the device parameters accurately.
- Ensure that the test conditions match the specified conditions in the datasheet.
Application Notes:
- Refer to the application notes provided by the manufacturer for specific design considerations and recommendations.
- Consider the parasitic inductances and capacitances in the circuit to optimize performance.
Inquiry - FMH28N50E