Specifications
SKU: 11742082
Parameter | Value |
---|---|
Type | N-Channel MOSFET |
VDS (Max) (V) | 600 |
RDS(on) (mΩ) | 300 at VGS = 10V |
ID (Max) (A) | 30 |
Power Dissipation (W) | 270 |
Package | TO-247 |
Operating Temperature (°C) | -55 to +150 |
Gate Charge (Qg) (nC) | 95 at VGS = 15V |
Input Capacitance (Ciss) (pF) | 2200 at VDS = 400V |
Output Capacitance (Coss) (pF) | 530 at VDS = 400V |
Reverse Transfer Capacitance (Crss) (pF) | 1150 at VDS = 400V |
Thermal Resistance (RθJC) (°C/W) | 0.78 |
Storage Temperature (°C) | -55 to +150 |
Instructions for Use
Handling Precautions:
- Handle the device with care to avoid damage to the pins and the die.
- Use proper ESD protection when handling the device to prevent electrostatic discharge damage.
Mounting:
- Ensure that the mounting surface is clean and free from contaminants.
- Apply a suitable thermal compound between the device and the heatsink to improve thermal conductivity.
- Tighten the mounting screws to the recommended torque specifications to ensure good thermal contact.
Electrical Connections:
- Connect the Drain (D), Source (S), and Gate (G) terminals correctly.
- Ensure that the gate drive voltage is within the specified range to avoid damaging the device.
- Use short, low-inductance leads to minimize parasitic inductance effects.
Thermal Management:
- Ensure adequate cooling to keep the junction temperature within the operating limits.
- Monitor the temperature of the device during operation and adjust the cooling as necessary.
Testing:
- Test the device in a controlled environment to ensure it meets the specified parameters.
- Use appropriate test equipment and procedures to avoid overstressing the device.
Storage:
- Store the device in a dry, cool place away from direct sunlight and sources of heat.
- Keep the device in its original packaging until ready for use to protect against moisture and physical damage.
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