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IKW30N60H3 K30H603 ORIGINAL GOODS IN STOCK

Specifications

SKU: 11742082

BUY IKW30N60H3 K30H603 ORIGINAL GOODS IN STOCK https://www.utsource.net/itm/p/11742082.html

Parameter Value
Type N-Channel MOSFET
VDS (Max) (V) 600
RDS(on) (mΩ) 300 at VGS = 10V
ID (Max) (A) 30
Power Dissipation (W) 270
Package TO-247
Operating Temperature (°C) -55 to +150
Gate Charge (Qg) (nC) 95 at VGS = 15V
Input Capacitance (Ciss) (pF) 2200 at VDS = 400V
Output Capacitance (Coss) (pF) 530 at VDS = 400V
Reverse Transfer Capacitance (Crss) (pF) 1150 at VDS = 400V
Thermal Resistance (RθJC) (°C/W) 0.78
Storage Temperature (°C) -55 to +150

Instructions for Use

  1. Handling Precautions:

    • Handle the device with care to avoid damage to the pins and the die.
    • Use proper ESD protection when handling the device to prevent electrostatic discharge damage.
  2. Mounting:

    • Ensure that the mounting surface is clean and free from contaminants.
    • Apply a suitable thermal compound between the device and the heatsink to improve thermal conductivity.
    • Tighten the mounting screws to the recommended torque specifications to ensure good thermal contact.
  3. Electrical Connections:

    • Connect the Drain (D), Source (S), and Gate (G) terminals correctly.
    • Ensure that the gate drive voltage is within the specified range to avoid damaging the device.
    • Use short, low-inductance leads to minimize parasitic inductance effects.
  4. Thermal Management:

    • Ensure adequate cooling to keep the junction temperature within the operating limits.
    • Monitor the temperature of the device during operation and adjust the cooling as necessary.
  5. Testing:

    • Test the device in a controlled environment to ensure it meets the specified parameters.
    • Use appropriate test equipment and procedures to avoid overstressing the device.
  6. Storage:

    • Store the device in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the device in its original packaging until ready for use to protect against moisture and physical damage.
(For reference only)

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