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IXFX44N60

Specifications

SKU: 11743100

BUY IXFX44N60 https://www.utsource.net/itm/p/11743100.html

Parameter Symbol Min Typ Max Unit Description
Collector-Emitter Voltage VCE(off) - - 600 V Maximum voltage between collector and emitter when the device is off
Gate-Emitter Voltage VGE(th) 2.0 4.0 6.0 V Gate-emitter threshold voltage
Continuous Collector Current IC - - 4.4 A Maximum continuous current through the collector
Pulse Collector Current (tp = 10 μs) IC(sm) - - 15 A Maximum pulse current through the collector
Power Dissipation PTOT - - 90 W Maximum power dissipation
Junction Temperature TJ - - 150 °C Maximum junction temperature
Storage Temperature TSTG -55 - 150 °C Temperature range for storage
Operating Temperature TA -55 - 150 °C Ambient operating temperature range

Instructions for Use:

  1. Mounting and Handling:

    • Ensure that the device is handled with care to avoid mechanical damage.
    • Use appropriate heat sinks to manage the thermal resistance and ensure the junction temperature does not exceed 150°C.
  2. Electrical Connections:

    • Connect the collector (C) to the load or circuit being controlled.
    • Connect the emitter (E) to the common ground or return path.
    • Apply the gate (G) voltage relative to the emitter to control the device.
  3. Gate Drive:

    • The gate-emitter threshold voltage (VGE(th)) is typically between 2.0V and 6.0V. Ensure that the gate drive voltage is within this range to properly turn on the device.
    • For reliable operation, apply a gate voltage slightly above the maximum threshold voltage to ensure full turn-on.
  4. Current Limiting:

    • Do not exceed the continuous collector current (IC) of 4.4A or the pulse collector current (IC(sm)) of 15A for short pulses.
    • Use current limiting resistors or other protective measures if necessary to prevent overcurrent conditions.
  5. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed 150°C.
    • Use heatsinks and thermal compounds to improve heat dissipation, especially under high power conditions.
  6. Storage and Operating Conditions:

    • Store the device in a dry environment within the temperature range of -55°C to 150°C.
    • Operate the device within the ambient temperature range of -55°C to 150°C to ensure reliable performance.
  7. Testing and Verification:

    • Before integrating the device into a circuit, verify its parameters using a suitable test setup.
    • Check for proper connections and ensure that all components are functioning as expected.

By following these instructions, you can ensure the reliable and efficient operation of the IXFX44N60 transistor.

(For reference only)

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