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IRFB4227 IRFB4227PBF TO-220

Specifications

SKU: 11743262

BUY IRFB4227 IRFB4227PBF TO-220 https://www.utsource.net/itm/p/11743262.html

Parameter Symbol Value Unit
Maximum Drain-Source Voltage VDSS 55 V
Maximum Gate-Source Voltage VGSS ±20 V
Maximum Continuous Drain Current (TC=25°C) ID(25°C) 78 A
Maximum Continuous Drain Current (TC=100°C) ID(100°C) 53 A
Maximum Pulse Drain Current (tp=10μs, IGM=6A) IDM 290 A
Total Power Dissipation (TC=25°C) PTOT(25°C) 175 W
Total Power Dissipation (TC=100°C) PTOT(100°C) 100 W
Junction Temperature Range TJ -55 to +175 °C
Storage Temperature Range TSTG -65 to +150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to manage the thermal resistance.
    • Handle the device with care to avoid mechanical damage.
  2. Electrical Connections:

    • Connect the drain (D), source (S), and gate (G) terminals correctly.
    • Use short and wide leads to minimize inductance and improve high-frequency performance.
  3. Thermal Management:

    • Ensure adequate cooling to keep the junction temperature within the specified range.
    • Use a heatsink with sufficient thermal conductivity and surface area.
  4. Gate Drive:

    • Apply a gate voltage within the specified limits to avoid damaging the gate oxide.
    • Use a low-impedance driver to minimize switching losses.
  5. Overcurrent Protection:

    • Implement overcurrent protection to prevent damage from excessive current.
    • Monitor the drain current and use a current-limiting circuit if necessary.
  6. Storage and Handling:

    • Store the device in a dry, cool place away from direct sunlight.
    • Follow ESD (Electrostatic Discharge) precautions to prevent damage.
  7. Testing:

    • Perform initial testing under controlled conditions to ensure proper operation.
    • Verify all connections and settings before applying power.
  8. Compliance:

    • Ensure that the application complies with relevant safety and regulatory standards.
(For reference only)

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