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2SD1047C=D1047C

Specifications

SKU: 11754827

BUY 2SD1047C=D1047C https://www.utsource.net/itm/p/11754827.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 80 V
Collector-Base Voltage VCBO - - 90 V
Emitter-Base Voltage VEBO - - 5 V
Collector Current IC - - 1.5 A
Base Current IB - - 0.15 A
DC Current Gain hFE 100 300 800 -
Transition Frequency fT - 300 - MHz
Power Dissipation PT - - 65 W
Junction Temperature TJ - - 150 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Handle the 2SD1047C with care to avoid mechanical damage.
    • Ensure proper heat sinking when operating at high power levels to maintain junction temperature within safe limits.
  2. Electrical Connections:

    • Connect the collector (C), base (B), and emitter (E) terminals correctly to avoid damage.
    • Use appropriate current-limiting resistors for the base to prevent excessive base current.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table to prevent device failure.
    • Ensure that the ambient temperature is within the storage temperature range during operation and storage.
  4. Testing:

    • Use a suitable multimeter or transistor tester to verify the functionality of the 2SD1047C.
    • Measure the DC current gain (hFE) to ensure it falls within the specified range.
  5. Storage:

    • Store the 2SD1047C in a dry, cool place to prevent moisture damage.
    • Avoid exposure to extreme temperatures and direct sunlight.
  6. Soldering:

    • Use a low-wattage soldering iron to avoid overheating the device.
    • Solder quickly to minimize thermal stress on the transistor.
  7. Applications:

    • The 2SD1047C is suitable for general-purpose amplification and switching applications.
    • It can be used in audio amplifiers, power supplies, and other circuits requiring high current and voltage handling capabilities.
(For reference only)

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