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10BQ060

Specifications

SKU: 11754945

BUY 10BQ060 https://www.utsource.net/itm/p/11754945.html

Parameter Symbol Min Typical Max Unit
Breakdown Voltage V(BR)DSS - 600 - V
Forward Transconductance gFS 25 - - S
Input Capacitance Ciss - 1370 - pF
Output Capacitance Coss - 108 - pF
Reverse Transfer Capacitance Crss - 110 - pF
On-State Resistance RDS(on) - 0.060 - Ω
Gate Charge Qg - 74 - nC
Total Power Dissipation PD - 10 - W
Operating Junction Temperature Tj -55 - 150 °C
Storage Temperature Range Tstg -55 - 150 °C

Instructions for Use:

  1. Handling and Storage:

    • Store the 10BQ060 in a dry, cool environment to prevent moisture damage.
    • Handle with care to avoid static discharge, which can damage the device.
  2. Mounting:

    • Ensure proper heat sinking to manage the power dissipation (PD).
    • Use appropriate mounting hardware to secure the device and maintain good thermal contact.
  3. Biasing and Operation:

    • Apply the gate voltage (Vgs) within the recommended range to control the on-state resistance (RDS(on)).
    • Ensure the drain-source voltage (Vds) does not exceed the breakdown voltage (V(BR)DSS).
  4. Thermal Management:

    • Monitor the junction temperature (Tj) to ensure it remains within the operating limits.
    • Use thermal paste or thermal interface materials to enhance heat transfer from the device to the heatsink.
  5. Electrical Characteristics:

    • Refer to the datasheet for detailed electrical characteristics and performance graphs.
    • Test the device under typical operating conditions to verify its performance.
  6. Safety:

    • Follow all safety guidelines and regulations when handling and operating the 10BQ060.
    • Use protective equipment such as gloves and goggles when necessary.
  7. Troubleshooting:

    • If the device fails to operate correctly, check for proper biasing, connections, and thermal management.
    • Consult the datasheet or manufacturer for additional troubleshooting tips.
(For reference only)

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