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2SJ303,J303,2SJ303-AZ

Specifications

SKU: 11756234

BUY 2SJ303,J303,2SJ303-AZ https://www.utsource.net/itm/p/11756234.html

Parameter / Model 2SJ303 J303 2SJ303-AZ
Type PNP Power Transistor PNP Power Transistor PNP Power Transistor
Collector-Emitter Voltage (Vceo) 100 V 100 V 100 V
Emitter-Base Voltage (Vebo) 5 V 5 V 5 V
Collector Current (Ic) 15 A 15 A 15 A
Power Dissipation (Ptot) 180 W 180 W 180 W
hFE (min/max) 20/120 20/120 20/120
Storage Temperature (Tstg) -55°C to +150°C -55°C to +150°C -55°C to +150°C
Operating Temperature (Tc) -55°C to +150°C -55°C to +150°C -55°C to +150°C
Package TO-3P TO-3P TO-3P
RoHS Compliance Yes Yes Yes
Notes Standard version Standard version AZ suffix indicates enhanced reliability or specific application

Instructions:

  1. Handling and Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Handle with care to avoid mechanical damage.
  2. Mounting:

    • Use a heat sink for optimal thermal performance.
    • Ensure proper alignment and secure mounting to prevent mechanical stress.
  3. Electrical Connections:

    • Connect the collector, base, and emitter terminals as per the circuit diagram.
    • Ensure all connections are tight and secure to avoid poor contact.
  4. Operational Precautions:

    • Do not exceed the maximum ratings specified in the table.
    • Operate within the recommended operating conditions to ensure reliability and longevity.
    • Use appropriate protection circuits to prevent overvoltage and overcurrent conditions.
  5. Testing:

    • Test the transistor using a multimeter or a dedicated transistor tester.
    • Verify the hFE and other parameters to ensure the device is functioning correctly.
  6. Disposal:

    • Dispose of the transistor according to local environmental regulations.
    • Recycle if possible, following RoHS guidelines.
(For reference only)

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