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TMS4464-15NL

Specifications

SKU: 11759513

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Parameter Description Value
Device Type 256K x 16-Bit CMOS Static RAM
Package Type 44-Pin Plastic Quad Flat Pack (PQFP)
Operating Voltage (Vcc) Supply Voltage Range 4.5V to 5.5V
Access Time (tAC) Access Time at Vcc = 5V, TA = 25°C 15 ns
Cycle Time (tCYC) Minimum Cycle Time 15 ns
Data Retention Time Data Retention Time at Vcc = 4.5V, TA = 85°C 10 years
Standby Current (Icc) Standby Current at Vcc = 5V, TA = 25°C 5 μA
Active Current (Icc) Active Current at Vcc = 5V, TA = 25°C 120 mA
Temperature Range (TA) Operating Temperature Range -40°C to +85°C
Storage Temperature Storage Temperature Range -65°C to +150°C
Pin Configuration Pin Count 44
Pin Functions - A0-A17: Address Inputs
- DQ0-DQ15: Data I/O
- CE: Chip Enable (Low Active)
- OE: Output Enable (Low Active)
- WE: Write Enable (Low Active)
- Vcc: Power Supply
- GND: Ground

Instructions for Use:

  1. Power Supply:

    • Connect Vcc to a stable 5V power supply.
    • Ensure the ground (GND) is properly connected to avoid noise and data corruption.
  2. Addressing:

    • Apply the desired address to the address lines (A0-A17) to select the memory location.
    • The device supports 256K addresses, each with 16 bits of data.
  3. Data I/O:

    • Data is read from or written to the data lines (DQ0-DQ15).
    • For read operations, set the Output Enable (OE) low while the Chip Enable (CE) is low.
    • For write operations, set the Write Enable (WE) low while the Chip Enable (CE) is low.
  4. Control Signals:

    • Chip Enable (CE): Low to enable the device; high to disable.
    • Output Enable (OE): Low to enable data output; high to tristate the data lines.
    • Write Enable (WE): Low to write data; high to prevent writing.
  5. Timing:

    • Ensure that the access time (tAC) and cycle time (tCYC) are respected to avoid data corruption.
    • Use appropriate timing circuits or microcontroller settings to meet these requirements.
  6. Environmental Conditions:

    • Operate the device within the specified temperature range to ensure reliable performance.
    • Store the device in a dry environment to prevent damage.
  7. Handling:

    • Handle the device with care to avoid static discharge, which can damage the internal circuitry.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.
  8. Testing:

    • Perform initial testing under controlled conditions to verify the functionality of the device.
    • Use standard test patterns to validate read and write operations.
(For reference only)

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