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IKW40N60H3 K40H603 IGBT

Specifications

SKU: 11764924

BUY IKW40N60H3 K40H603 IGBT https://www.utsource.net/itm/p/11764924.html

Description: The IKW40N60H3 K40H603 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It is a high-voltage, high-speed, and low-loss power switching device. Features: High voltage rating of 600V Low on-state resistance (RDS(on)) of 0.45 Ω High switching speed of 7.5 kHz Low gate charge (Qg) of 42 nC Low gate-emitter voltage (VGE) of 10 V Low collector-emitter saturation voltage (VCE(sat)) of 1.7 V High current rating of 40A Applications: The IKW40N60H3 K40H603 IGBT is suitable for use in high-power switching applications such as motor control, power supplies, and home appliances. It is also suitable for use in solar inverters, UPS systems, and other high-power applications. (For reference only)

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