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D44VH10G D44VH10 TO-220 NPN

Specifications

SKU: 11772374

BUY D44VH10G D44VH10 TO-220 NPN https://www.utsource.net/itm/p/11772374.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 100 V
Collector-Base Voltage VCBO - - 100 V
Emitter-Base Voltage VEBO - - 5 V
Collector Current IC - - 1.5 A
Base Current IB - - 0.15 A
Power Dissipation PTOT - - 62.5 W
Junction Temperature TJ -55 - 150 °C
Storage Temperature Range TSTG -55 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure the device is mounted on a suitable heatsink to maintain the junction temperature within the specified limits.
    • Use thermal grease between the device and the heatsink to improve heat transfer.
  2. Soldering:

    • Preheat the PCB to reduce thermal shock.
    • Soldering temperature should not exceed 300°C.
    • Soldering time should not exceed 10 seconds per connection.
  3. Handling:

    • Handle the device with care to avoid mechanical damage.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.
  4. Biasing:

    • Ensure the base current is sufficient to fully saturate the transistor when used as a switch.
    • For linear applications, ensure the base current is set to achieve the desired collector current without exceeding the maximum ratings.
  5. Storage:

    • Store the device in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the device in its original packaging until ready for use to protect against moisture and static damage.
  6. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the device before installation.
    • Test the device under controlled conditions to ensure it meets the required specifications.
  7. Derating:

    • Derate the power dissipation at higher ambient temperatures to ensure reliable operation.
    • Refer to the derating curve provided in the datasheet for specific guidelines.
(For reference only)

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