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Specifications
SKU: 11772477
| Parameter | Symbol | Test Conditions | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Continuous Drain Current | ID | TC = 25°C | - | 47 | - | A |
| Continuous Drain Current | ID | TC = 75°C | - | 35 | - | A |
| Pulsed Drain Current | IDP | t = 10 μs, Duty Cycle = 1% | - | 180 | - | A |
| Gate-Source Voltage | VGS | - | -15 | - | 15 | V |
| Drain-Source Breakdown Voltage | V(BR)DSS | IG = 0, ID = 250 μA | 55 | - | 60 | V |
| Gate-Source Leakage Current | IGSS | VGS = ±15V, T = 25°C | -100 | - | - | nA |
| Drain-Source On-State Resistance | RDS(on) | VGS = 10V, ID = 47A, TC = 25°C | - | 2.9 | - | mΩ |
| Drain-Source On-State Resistance | RDS(on) | VGS = 10V, ID = 35A, TC = 75°C | - | 3.5 | - | mΩ |
| Gate Charge | QG | - | - | 105 | - | nC |
| Input Capacitance | Ciss | VDS = 15V, VGS = 0V | - | 1800 | - | pF |
| Output Capacitance | Coss | VDS = 15V, VGS = 0V | - | 450 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = 15V, VGS = 0V | - | 450 | - | pF |
| Total Power Dissipation | PD | TC = 25°C | - | - | 125 | W |
| Junction Temperature | TJ | - | - | - | 150 | °C |
| Storage Temperature Range | TSTG | - | -65 | - | 150 | °C |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to manage thermal resistance.
- Use a heatsink with a thermal resistance (θJA) appropriate for the application.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use short leads to minimize parasitic inductance and capacitance.
Gate Drive:
- Apply a gate-source voltage (VGS) within the specified range to turn the MOSFET on or off.
- Ensure the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed the maximum rating.
- Use thermal paste between the MOSFET and heatsink for better thermal conductivity.
Overcurrent Protection:
- Implement overcurrent protection to prevent damage from excessive drain current (ID).
Storage:
- Store the MOSFET in a dry environment within the specified storage temperature range (TSTG).
Handling:
- Handle the MOSFET with care to avoid mechanical stress and electrostatic discharge (ESD).
- Use ESD-protected workstations when handling the device.
Inquiry - IRFB3006G IRFB3006GPBF TO-220
