Specifications
SKU: 11772560
Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | IC = 0 | - | - | 450 | V |
Emitter-Collector Voltage | VECS | IB = 0 | - | - | 450 | V |
Collector-Base Voltage | VCBO | IE = 0 | - | - | 450 | V |
Base-Emitter Voltage | VBE | IC = 100 mA, Tc = 25°C | - | - | 3.0 | V |
Continuous Collector Current | IC | Tc = 25°C | - | - | 15 | A |
Continuous Collector Dissipation | PC | Tc = 25°C | - | - | 120 | W |
Junction Temperature | TJ | - | - | - | 150 | °C |
Storage Temperature Range | TSTG | - | -55 | - | 150 | °C |
Instructions for Use:
Mounting:
- Ensure the device is mounted on a heatsink to dissipate heat effectively.
- Use thermal grease between the device and the heatsink to improve thermal conductivity.
Electrical Connections:
- Connect the collector (C) to the high-voltage side of the circuit.
- Connect the emitter (E) to the low-voltage side of the circuit.
- Connect the base (B) to the control signal source.
Biasing:
- Apply a suitable base current (IB) to ensure the transistor operates in the desired region (cut-off, active, or saturation).
Overvoltage Protection:
- Use appropriate overvoltage protection circuits to prevent damage from transient voltage spikes.
Dissipation Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed 150°C.
- Use forced air cooling or a larger heatsink if necessary to maintain safe operating temperatures.
Storage:
- Store the device in a dry, cool place within the temperature range of -55°C to 150°C.
Handling:
- Handle the device with care to avoid mechanical damage.
- Use proper ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
Testing:
- Test the device under controlled conditions to ensure it meets the specified parameters before integrating it into the final application.
For more detailed information, refer to the datasheet provided by TOSHIBA.
(For reference only)Inquiry - K3878 2SK3878 TOSHIBA TO-3P